Abstract:Silicon-on-insulator devices are widely utilized in high-performance and high-reliability fields, facing challenges from self-heating effects (SHEs). However, research on the heat dissipation path closely related to SHEs remains incomplete. This paper initiates an in-depth analysis of thermal effects involving the fine structures within the heat dissipation path, using ultrafast pulse I-V measurements combined with thermal simulations. It is found in practical processes that the SHEs of scaled-down devices decreased by 40% rather than increased. Research shows the improvement is attributed to the reduction in the thickness of the buried oxide layer between different generations of processes, and the decrease in thermal sensitivity. Based on the two-stage SHE mechanism, the study clarifies for the first time that the box layer mainly affects first-stage heat dissipation, and the main timescale of impact is about the first 100 ns. In addition, the heat dissipation contact capability can effectively affect the temperature rise of first-stage SHEs. For the first time, we reveal that the TiN barrier layer with low thermal conductivity is the key factor limiting heat dissipation through contact. This study represents the crucial step toward a comprehensive investigation of SHEs, offering substantial support for device modeling.

Analysis Of Self-Heating Effect In A Soi Ldmos Device Under An Esd Stress

Electrothermal characterization of SOI FinFETs

Investigation of self-heating effect in SOI-LDMOS by device simulation

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs—AC Versus Circuit-Speed Random Stress

Thermal Transient Response of SOI LDMOSFET under Electromagnetic Interference

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance