Investigation of self-heating effect in SOI-LDMOS by device simulation

Zhiyuan Lun,Gang Du,Jieyu Qin,Yi Wang,Juncheng Wang,

DOI: https://doi.org/10.1109/ICSICT.2012.6467622

2012-01-01

Abstract:Self-heating effect in SOI-LDMOS power devices has become a repeated discussion as the active silicon layer thickness is reduced and buried oxide layer thickness is increased. Heat dissipation and the self-heating effect become critical issues of SOI power devices. In this paper, simulations of self-heating effect under different thermal boundary conditions are performed. The influence of difference device parameters, including BOX (Buried OXide) thickness, trench length, SOI (Silicon On Insulator) thickness, source/drain lumped surface thermal resistance, are simulated to investigate their impact on self-heating effect. The work is intended to provide reference for device design and the optimization of source/drain contact in consideration of self-heating effect.