Abstract:Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice applications; however, its high exfoliation energy makes obtaining it challenging. In this study, we propose a more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk & beta;-Ga2O3. The exfoliation efficiency with the assistance of In-doping and the doping influence on the stability and structural and electronic properties of ML Ga2O3 are systematically studied using first-principles calculations. The exfoliation energy of ML Ga2O3 is found to be reduced by 28% and is of the same order of magnitude as that of typical van der Waals (vdWs) 2D materials. Besides, excellent stability is preserved for ML Ga2O3 at extremely high In doping concentration by phonon spectrum and ab initio molecular dynamics inspections. The bandgap of ML Ga2O3 decreases from 4.88 to 4.25 eV with increased In concentration, and the modification of the VBM converts ML Ga2O3 to a direct bandgap semiconductor. With the suppression of ZA mode phonon scattering, the pristine and In-doped ML Ga2O3 exhibit high electron mobility, whereas the strong electron-phonon coupling (EPC) effect significantly decreases the hole mobility. Finally, the transfer characteristics of 5 nm MOSFETs based on the pristine and In-doped ML Ga2O3 with varied In concentrations are simulated based on the non-equilibrium Green's function (NEGF) formalism. The I-on for HP has a maximum of 3060 & mu;A & mu;m(-1) at In doping concentration of 5% and is triple that of the pristine ML Ga2O3 for LP at In doping concentration of 20%. The FOMs of n-type MOSFETs based on the In-doped ML Ga2O3 and typical 2D materials are compared and shows huge potential for sub-5 nm applications. Our study applies a new strategy for obtaining ML Ga2O3 and can also improve the device performance at the same time.

Si-incorporated amorphous indium oxide thin-film transistors

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors

Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO x:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

Overall Enhancement of Electrical Properties of Indium Oxide Thin-Film Transistors by Surface Doping

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mobility–stability trade-off in oxide thin-film transistors

Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Present status of amorphous In–Ga–Zn–O thin-film transistors

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric