Abstract:The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ∼(0.63±0.03 eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing up to 550 °C as long as the ion dose was 2–3.5 times the threshold dose for complete isolation, Dth, for the respective ion species. By studying the thermal stability and the temperature dependence of isolation, we have demonstrated the various stages leading to the production of stable isolation with the increasing dose of 2 MeV C ions. For ion doses less than 0.5Dth, point defects which are stable below 250 °C are responsible for the degradation of hole mobility and hole trapping. The stability of isolation is increased to ∼400 °C for a dose Dth due to the creation of defect pairs. Furthermore, the hopping conduction mechanism is already present in the damaged epilayer implanted to Dth. Higher order defect clusters or complexes, such as the arsenic antisite, AsGa, are responsible for the thermal stability of implantation isolation at 550 °C. The substrate temperature (−196–200 °C) does not have an effect on the isolation process further revealing that the stability of isolation is related to defect clusters and not point-like defects. An average number of eight carbon ions with energy of 2 MeV are required to compensate 100 holes, which provides a general guideline for choosing the ion dose required for the isolation of a GaAs layer doped with a known Zn concentration. A discussion of the results on the implantation isolation of p-GaAs previously reported in the literature is also included.

Simultaneous Disordering and Isolation Induced by Ion Mixing in Ingaas/Inp Superlattice Structures

Ion Mixing of Iii-V-Compound Semiconductor Layered Structures

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect

Lateral Selectivity of Ion-Induced Quantum Well Intermixing

Argon Plasma Induced Quantum Well Intermixing Technology

Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature

Interplay of the disorder and strain in gallium oxide

Electric-Field-Induced Quasi-Phase-Matched Three-Wave Mixing in Silicon-based Superlattice-on-Insulator Integrated Circuits

Implantation-Induced Electrical Isolation of Gaasn Epilayers Grown by Metalorganic Chemical Vapor Deposition

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Influence of ion implantation on the magnetic and transport properties of manganite films

Critical issues in the formation of quantum computer test structures by ion implantation

Effect of ion irradiation on superconducting thin films

Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials

Optimization of Novel Oxide-Free Insulated Gate Structure for Inp Having an Ultrathin Silicon Interface Control Layer

Electrically induced insulator-to-metal transition in InP-based ion-gated transistor

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Charge-discharge dynamics of disorder induced gap state continuum at compound semiconductor-insulator interfaces