Electric-Field-Induced Quasi-Phase-Matched Three-Wave Mixing in Silicon-based Superlattice-on-Insulator Integrated Circuits

Richard Soref,Francesco De Leonardis
DOI: https://doi.org/10.1016/j.chip.2023.100042
2023-02-01
Chip
Abstract:We present a theoretical investigation, based on the tight-binding Hamiltonian, of efficient electric-field-induced three-waves mixing (EFIM) in an undoped lattice-matched short-period superlattice (SL) that integrates quasi-phase-matched (QPM) SL straight waveguides and SL racetrack resonators on an opto-electronic chip. Periodically reversed DC voltage is applied to electrode segments on each side of the strip waveguide. The spectra of χ xxxx ( 3 ) and of the linear susceptibility have been simulated as a function of the number of the atomic monolayers for “non-relaxed” heterointerfaces, and by considering all the transitions between valence and conduction bands. The large obtained values of χ xxxx ( 3 ) make the ( ZnS ) 3 / ( S i 2 ) 3 short-period SL a good candidate for realizing large effective second-order nonlinearity, enabling future high-performance of the SLOI PICs and OEICs in the 1000-nm and 2000-nm wavelengths ranges. We have made detailed calculations of the efficiency of second-harmonic generation and of the performances of the optical parametric oscillator (OPO). The results indicate that the ( ZnS ) N / ( S i 2 ) M QPM is competitive with present PPLN technologies and is practical for classical and quantum applications.
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