Abstract:Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage the capabilities of LE-$\mu$SR to perform an investigation of the SiO$_\text{2}$-SiC interface. Thermally oxidized samples are investigated before and after annealing in nitric oxide (NO) and argon (Ar) ambience. Thermal oxidation is found to result in structural changes both in the SiC crystal close to the interface and at the interface itself. Annealing in NO environment is known to passivate the defects leading to a reduction of the density of interface traps (D$_{it}$); LE-$\mu$SR further reveals that the NO annealing results in a thin layer of high carrier concentration in SiC, extending to more than 50 nm depending on the annealing conditions. We also see indications of Si vacancy (V$_{Si}$) formation in SiC after thermal oxidation. Following NO annealing, nitrogen occupies the V$_{Si}$ sites, leading to the reduction in D$_{it}$ and at the same time, creating a charge-carrier-rich region near the interface. By comparing the LE-$\mu$SR data from a sample with known doping density, we perform a high-resolution quantification of the free carrier concentration near the interface after NO annealing and discuss the origin of observed near-surface variations. Finally, the depletion of carriers in a MOS capacitor in the region below the interface is shown using LE-$\mu$SR. The NO annealed sample shows the narrowest depletion region, likely due to the reduced D$_{it}$ and charge-carrier-rich region near the interface. Our findings demonstrate the many benefits of utilizing LE-$\mu$SR to study critical regions of semiconductor devices that have been inaccessible with other techniques while retaining nanoscale depth resolution and a non-destructive approach.

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors