Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Properties of plasma-deposited amorphous SiO2 films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane

On the Structural and Optical Properties of Sputtered Hydrogenated Amorphous Silicon Thin Films

Hydrogen in Undoped and Heavily in Situ Phosphorus Doped Silicon Films Deposited Using Disilane and Phosphine

Effects of hydrogen pressure on hydrogenated amorphous silicon thin films prepared by low-temperature reactive pulsed laser deposition

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Structural Studies on Semiconducting Hydrogenated Amorphous Silicon Oxide Films

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Effects of Hydrogen-Dilution on Opto-Structural Properties of Hot-wire CVD Grown a-Si:H/nc-Si:H Multilayer for Photovoltaics

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System