Abstract:Ab initio methods based on density functional theory are employed to investigate the bonding of oxygen (O) at the oxide/nanocrystal (NC) interface after hydrogen (H)-passivated silicon (Si) NCs are oxidized. Besides the well-known quantum confinement effect, the type of O bonding and the oxidation state of Si at the oxide/NC interface are found to significantly affect the optical properties of oxidized Si NCs. After oxidation, the excitation energies of Si-35 and Si-66 increase, while those of Si-87 and Si-123 decrease. We show that oxidation-induced redshifts in the light emission from Si NCs do not always result from defective O such as doubly bonded O at the oxide/NC interface. When Si atoms at the oxide/NC interface are mainly in low oxidation states, backbond O at the interface per se results in the redshifts in the light emission from Si NCs. When Si atoms at the oxide/NC interface are mainly in high oxidation states. Si3+=O at the interface leads to the redshifts in the light emission from Si NCs. It is found that for Si NCs with perfect oxide/NC interface (i.e., O at the interface is all backbond O) the seriously weakened next-nearest-neighboring Si Si of Si3+ readily breaks after excitation. At the oxide/NC interface. Si2+=O induced strong electronic localization and Si2+=O and Si3+=O induced reduction of interface polarization stabilize the geometry of oxidized Si NCs at the excited state. The electronic localization of severely stressed bridge O at the oxide/NC interface is relatively weak. This facilitates the breaking of nearest-neighboring Si Si at the oxide/NC interface as oxidized Si NCs are excited.

Structural Studies on Semiconducting Hydrogenated Amorphous Silicon Oxide Films

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Properties of plasma-deposited amorphous SiO2 films

Infrared Absorption Properties of Si— O —Si Bonds in Plasma-deposited Amorphous SiOx∶H Films

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

On the Structural and Optical Properties of Sputtered Hydrogenated Amorphous Silicon Thin Films

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content

Thermally Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon: A Combined Spectroscopic and Molecular Dynamics Simulation Investigation.

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Structural properties of hydrogenated amorphous silicon carbide alloys

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films