Abstract:We have developed a Kramers–Kronig consistent analytical expression to fit the measured optical functions of hydrogenated amorphous silicon (a-Si:H) based alloys, i.e., the real and imaginary parts of the dielectric function (ε1,ε2) (or the index of refraction n and absorption coefficient α) versus photon energy E for the alloys. The alloys of interest include amorphous silicon–germanium (a-Si1−xGex:H) and silicon–carbon (a-Si1−xCx:H), with band gaps ranging continuously from ∼1.30 to 1.95 eV. The analytical expression incorporates the minimum number of physically meaningful, E independent parameters required to fit (ε1,ε2) versus E. The fit is performed simultaneously throughout the following three regions: (i) the below-band gap (or Urbach tail) region where α increases exponentially with E, (ii) the near-band gap region where transitions are assumed to occur between parabolic bands with constant dipole matrix element, and (iii) the above-band gap region where (ε1,ε2) can be simulated assuming a single Lorentz oscillator. The expression developed here provides an improved description of ε2 (or α) in the below-band gap and near-band gap regions compared with previous approaches. Although the expression is more complicated analytically, it has numerous applications in the analysis and simulation of thin film a-Si:H based p-i-n and n-i-p multilayer photovoltaic devices. First, we describe an approach whereby, from a single accessible measure of the optical band gap, the optical functions can be generated over the full solar spectrum for a sample set consisting of the highest quality intrinsic a-Si:H based alloys prepared by plasma-enhanced chemical vapor deposition using the principle of maximal H2 dilution. Second, we describe quantitatively how such an approach can be modified for sample sets consisting of lower quality alloy materials. Finally, we demonstrate how the generated optical functions can be used in simulations of the absorption, reflection, and quantum efficiency spectra of a-Si:H based single-junction and multijunction solar cells.

Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Structural Studies on Semiconducting Hydrogenated Amorphous Silicon Oxide Films

Structural and Optoelectronic Properties of A-Si:H: A New Analysis Based on Spectroscopic Ellipsometry

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Structure and Electronic States in A-Si:H Thin Films

Unravelling the Electrochemical Impedance Spectroscopy of Hydrogenated Amorphous Silicon Cells for Photovoltaics

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

Structural properties of hydrogenated amorphous silicon carbide alloys

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Correlation Between the H+ Concentration in the Electrolyte and the Photoluminescence of Porous Silicon

Observation of suppressed diffuson and propagon thermal conductivity of hydrogenated amorphous silicon films

Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics