Abstract:The phosphorus doped n-type hydrogenated microcrystalline silicon (n-μc-Si:H) thin films are prepared, at the two low substrate temperatures of room temperature and 200°C, through a low-frequency inductively coupled plasma assisted chemical vapor deposition. The effect of the substrate temperature on the structural properties of the thin films, such as the X-ray Diffraction (XRD) patterns and the Raman spectra, is studied. The XRD measurements show that the diffraction orientations of the thin films present an obvious change when the radio frequency power is increased from 1300W to 2300W. The Raman spectra of the thin films deposited at room temperature unambiguously present a phase transition from the amorphous structure to microcrystalline structure whereas no structural phase transition is observed for the thin films deposited at 200°C. The effect of the substrate temperature on the crystalline volume fraction of the thin films presents a large difference for the radio frequency power in the range of 1300W–1700W, while the difference becomes small when the power is increased from 1700W to 2300W. The deposition rate and the radio frequency power-sheet resistance curve of the thin films deposited at room temperature are obviously different from those of the thin films prepared at 200°C. It is attributed to the joint effect of the radio frequency power and substrate temperature on the doping concentration. The electron energy distribution function of the species in the chamber is mainly distributed in a low energy range.

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films

Influence of Total Gas Flow Rate on Microcrystalline Silicon Films Prepared by VHF-PECVD

Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Effects of Drift Due to Chamber's Long-time Usage on Microcrystalline Silicon Properties

Analysis of Heating Effect on the Process of High Deposition Rate Microcrystalline Silicon

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Influence of Substrate on the Growth of Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Highly Doped P-Type Microcrystalline Silicon Thin Films Fabricated by A Low-Frequency Inductively Coupled Plasma at A Low Temperature

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Effect of gas temperature on the structural and optoelectronic properties of a-Si: H thin films deposited by PECVD

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films