Ryan E. Warburton,Sara Pellegrini,Lionel Tan,Jo Shien Ng,Andrey Krysa,Kris Groom,John P.R. David,Sergio Cova,Gerald S. Buller
Abstract:This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **How to cool electrons in solid - state devices through the evaporative emission mechanism**. Specifically, the author explores the possibility of achieving electron cooling by using sub - band filtering in quantum wire devices. When electrons in high - energy sub - bands scatter out of the initial electron distribution, the system will re - balance to different chemical potentials and temperatures, resulting in significant cooling of the system. The author also discusses the influence of device geometry on the final electron temperature and considers relevant factors for possible experiments.
### Background and Problem Description of the Paper
As the size of electronic devices decreases, they enter the field of quantum physics from the field of classical physics. Many classical concepts, such as resistance, need to be re - interpreted on the mesoscopic scale. Among them, the classical concept of a refrigerator can be applied to an electron gas, that is, cooling the electron gas by applying a voltage. The paper studies the problem of cooling electrons using the evaporative emission method in mesoscopic optoelectronic devices. This method makes the remaining electrons re - balance to a lower temperature by removing high - energy sub - band electrons in a multi - electron system.
### Research Methods
1. **Theoretical Model**:
- The author analyzes the cooling characteristics of these devices based on the Landauer formula. The Landauer formula was originally used to explain the electron transport characteristics in quantum devices, which links these characteristics to the quantum - mechanical scattering amplitudes of electrons passing through the device.
- Calculate these amplitudes using the extended R - matrix theory.
2. **Device Design**:
- The simplest device is a T - shaped connected quantum wire, which is used to remove high - energy electrons from an electron gas at a fixed temperature.
- The device consists of three leads: an input lead, an output lead, and a side arm. Electrons are injected into the device through the input lead and are in a thermal equilibrium state at an initial temperature \(T_i\) and a chemical potential \(\mu_i\) in the input region.
3. **Cooling Mechanism**:
- In the scattering region, high - energy sub - band electrons are more likely to scatter into the side arm, while low - energy sub - band electrons scatter into the output lead.
- Electron cooling can be achieved by optimizing the design of the T - shaped junction. Further improvement to the "plus - sign junction" design can provide a cooling effect of up to 15%.
### Results and Conclusions
- **T - shaped Junction Device**:
- For all initial temperatures, the cooling parameter \(\eta> 1\), which means that this device heats the electrons.
- By adjusting the width of the side arm, a cooling effect can be achieved, but the cooling effect is limited.
- **Plus - sign Junction Device**:
- The plus - sign junction design significantly improves the cooling effect, reaching a cooling rate of more than 15%.
- A single plus - sign junction unit can cool electrons by about 45°C at room temperature.
### Experimental Considerations
- Using the actual experimental parameters of InSb and GaAs, the optimal cooling temperature is determined.
- The cooling parameter \(\eta\sim0.9\) at room temperature means that the electron population is cooled by 30 K, which makes the cooled electrons available for detecting optical frequencies corresponding to room - temperature thermal energy.
### Summary and Future Prospects
The paper shows that significant electron cooling can be achieved in room - temperature devices through quantum effects. The plus - sign junction design is more effective than the T - shaped junction design. Future research can further optimize the device geometry to improve the cooling effect. In addition, the cooling effect can be increased by connecting multiple plus - sign junctions in series.
### Formula Summary
- Sub - band electron density:
\[
\rho^{(\ell)}_n(E, T_\ell, \mu_\ell)=f(E; T_\ell, \mu_\ell)D^{(\ell)}_n(E)
\]
where,
\[
D^{(\ell)}_n(E)=[E - \epsilon^{(\ell)}_n]^{-1/2}
\]
- Fermi - Dirac distribution function:
\[
\rho^{(\ell)}_n(E, T_\ell, \mu_\ell)=f(E; T_\ell, \mu_\ell)D^{(\ell)}_n(E)
\]
- Cooling parameter:
\[
\eta(T_i, \mu_i)=\frac{T_o(T_i, \mu_i)}{T_i}
\]
Through these formulas and theoretical models, the author successfully