The effect of interface angle on the thermal conductivity of Si/Ge superlattices

Ying-Guang Liu,Guo-Liang Ren,Aleksandr Chernatynskiy,Xiao-Feng Zhao

DOI: https://doi.org/10.1039/d1cp03544d

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:The special interface angle arrangement induces coherent transport of phonons and significantly improves the thermal conductivity.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

Role Of Surface-Segregation-Driven Intermixing On The Thermal Transport Through Planar Si/Ge Superlattices

Peixuan Chen,N A Katcho,J P Feser,Wu Li,M Glaser,O G Schmidt,David G Cahill,N Mingo,A Rastelli

DOI: https://doi.org/10.1103/PhysRevLett.111.115901

IF: 8.6

2013-01-01

Physical Review Letters

Abstract:It has been highly debated whether the thermal conductivity kappa of a disordered SiGe alloy can be lowered by redistributing its constituent species so as to form an ordered superlattice. By ab initio calculations backed by systematic experiments, we show that Ge segregation occurring during epitaxial growth can lead to kappa values not only lower than the alloy's, but also lower than the perfect superlattice values. Thus we theoretically demonstrate that kappa does not monotonically decrease as the Si- and Ge-rich regions become more sharply defined. Instead, an intermediate concentration profile is able to lower kappa below both the alloy limit (total intermixing) and also the abrupt interface limit (zero intermixing). This unexpected result is attributed to the peculiar behavior of the phonon mean free path in realistic Si/Ge superlattices, which shows a crossover from abrupt-interface-to alloylike values at intermediate phonon frequencies of similar to 3 THz. Our calculated kappa's quantitatively agree with the measurements when the realistic, partially intermixed profiles produced by segregation are considered.
Impacts of Cone-Structured Interface and Aperiodicity on Nanoscalethermal Transport in Si/Gesuperlattices

Pengfei Ji,Yiming Rong,Yuwen Zhang,Yong Tang

DOI: https://doi.org/10.1007/s11708-018-0532-8

2018-01-01

Frontiers in Energy

Abstract:Si/Gesuperlattices are promising thermoelectric materials to convert thermal energy into electric power. The nanoscale thermal transport in Si/Gesuperlattices is investigated via molecular dynamics (MD) simulation in this short communication. The impact of Si and Ge interface on the cross-plane thermal conductivity reduction in the Si/Gesuperlattices is studied by designing conestructured interface and aperiodicity between the Si and Ge layers. The temperature difference between the left and right sides of the Si/Gesuperlattices is set up for nonequilibrium MD simulation. The spatial distribution of temperature is recorded to examine whether the steadystate has been reached. As a crucial factor to quantify thermal transport, the temporal evolution of heat flux flowing through Si/Gesuperlattices is calculated. Compared with the even interface, the cone-structured interface contributes remarkable resistance to the thermal transport, whereas the aperiodic arrangement of Si and Ge layers with unequal thicknesses has a marginal influence on the reduction of effective thermal conductivity. The interface with divergent cone-structure shows the most excellent performance of all the simulated cases, which brings a 33% reduction of the average thermal conductivity to the other Si/Gesuperlattices with even, convergent cone-structured interfaces and aperiodic arrangements. The design of divergent cone-structured interface sheds promising light on enhancing the thermoelectric efficiency of Si/Ge based materials.
Heat Conduction in Si/Ge Superlattices: A Molecular Dynamics Study

Pengfei Ji,Yiming Rong,Yuwen Zhang,Yong Tang

DOI: https://doi.org/10.1115/imece2017-70270

2018-01-01

Abstract:Owing to the exceptional low thermal conductivity, Si/Ge superlattices becomes an attractive thermoelectric material to convert thermal energy into electric power. The heat conduction process in Si/Ge superlattices is studied by employing the molecular dynamics (MD) simulation in this paper. For the purpose of investigating the role of Si and Ge interface to the contribution of overall thermal conductivity reduction in Si/Ge superlattices, convergent and divergent cone nanostructures are designed as interfaces between Si layer and Ge layer. By keeping fixed temperature difference between the left and right sides of Si/Ge superlattices with constant length, the spatial distribution of temperature and temporal evolution of heat flux flowing through Si/Ge superlattices are calculated. Comparing with the Si/Ge superlattices with even interface, the nanostructured interface contributes to impede the heat conduction between Si and Ge atoms. Si/Ge superlattices with divergent cone interface presents the most excellent performance among all the simulated cases. The design of nanostructured interface paves a promising path to enhance the efficiency of Si/Ge thermoelectric material.
Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

Yajuan Cheng,Shiyun Xiong,Tao Zhang

DOI: https://doi.org/10.3390/nano12244373

IF: 5.3

2022-12-08

Nanomaterials

Abstract:The manipulation of phonon transport with coherent waves in solids is of fundamental interest and useful for thermal conductivity design. Based on equilibrium molecular dynamics simulations and lattice dynamics calculations, the thermal transport in SiGe superlattice nanowires with a tuned Si/Ge interface density was investigated by using the core-shell and phononic structures as the primary stacking layers. It was found that the thermal conductivity decreased with the increase of superlattice period lengths (Lp) when Lp was larger than 4 nm. This is because introducing additional Si/Ge interfaces can enhance phonon scattering. However, when Lp<4 nm, the increased interface density could promote heat transfer. Phonon density-of-state analysis demonstrates that new modes between 10 and 14 THz are formed in structures with dense Si/Ge interfaces, which is a signature of coherent phonon transport as those modes do not belong to bulk Si or Ge. The density of the newly generated modes increases with the increase of interface density, leading to an enhanced coherent transport. Besides, with the increase of interface density, the energy distribution of the newly generated modes becomes more balanced on Si and Ge atoms, which also facilitates heat transfer. Our current work is not only helpful for understanding coherent phonon transport but also beneficial for the design of new materials with tunable thermal conductivity.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
The Out-of-plane Thermal Conductivity of Si/Ge Superlattice Based On the Serious Model

冯媛,梁新刚,鞠生宏

2013-01-01

Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics

Abstract:The superlattice semiconductor materials are widely used in thermal, optical, microelectronic devices. Therefore it is necessary to study its thermal conductivity and heat transfer properties. A serious model of thermal resistance was used to calculate the thermal conductivity of Si/Ge superlattice that considers the effect of interfaces and phonon transmission variation with wavelength. The change of thickness ratio of Si and Ge films will not affect the thermal conductivity of the superlattices for fixed period. With increasing temperature, the thermal conductivity approaches to a constant value, the role of interface scattering of phonon propagation decreases, and the U progress is getting more and more important.
Interface thermal conductance and the thermal conductivity of multilayer thin films

David Cahill,Andrew Bullen,Seung-Min Lee

DOI: https://doi.org/10.1068/htwi9

IF: 1.082

2000-01-01

High Temperatures-High Pressures

Abstract:Accurate and simple measurements of the thermal conductivity of thin films deposited on high thermal conductivity substrates have been recently enabled by the development of an Ac hot-wire method, the 3 omega method. Recent progress in the measurement and understanding of heat transport in ultra-thin films (much less than 1 mu m thick) and multilayers is reviewed, and the possibility of using solid-solid interfaces on nanometer length scales to control heat transport in thin film materials is explored. The finite thermal conductance of solid-solid interfaces becomes important when considering heat transport in single layer films <100 nm thick. Through the use of multilayer films-for example, epitaxial superlattices of crystalline semiconductors or nanometer-thick layers of amorphous and microcrystalline oxides-we can study materials with an extremely high and controllable density of internal interfaces, and evaluate the effect of these interfaces on heat transport. For the case of Si-Ge superlattices, the relatively large mismatch of the vibrational properties of silicon and germanium creates a larger reduction in thermal conductivity than for GaAs-A1As superlattices. Surprisingly, heat conduction in multilayers of disordered oxides is essentially unchanged by a high interface density.
Dual Effects of Hetero-Interfaces on Phonon Thermal Transport Across Graphene/c3n Lateral Superlattices

Xin Wu,Penghua Ying,Chunlei Li,Qiang Han

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2022.123643

2023-01-01

Abstract:Two-dimensional (2D) lateral superlattices, a typical artificial nano-phononic crystal, have stimulated widespread interests and potential application prospects in terms of their physically interesting features. Herein, we have found wave-particle crossover of phonon transport in the graphene (Gr)/2D polyani-line (C3N) lateral superlattices, which is an indication of a transition in the phonon transport mecha-nism from the incoherent to coherent regime. Due to the high structural similarity of C3N to Gr, the thermal conductivity of the Gr/C3N lateral superlattice can achieve an ultra-wide modulation range of about 500 similar to 1100 W m -1 K -1, which is far beyond that of other superlattices. The analysis shows that an increase of the interface density will on the one hand weaken the thermal conductivity by increas-ing phonon-interface scattering, and on the other hand increase it by lowering the phonon transport barriers and allowing more long-wavelength phonons to participate in the transport. This determines the parabolic trend of thermal conductivity containing the minimum, and also reflects the dual effects of hetero-interfaces on phonon thermal transport. In addition, phonon calculations show that the above variation in thermal conductivity is entirely attributable to differences in the phonon mean free path for different interface densities and is not related to their group velocity.(c) 2022 Elsevier Ltd. All rights reserved.
Interface Effects on Lattice Thermal Conductivities of Superlattices

Yunfei Chen,Deyu Li,Juekuan Yang,Yujuan Wang,Han Hu

DOI: https://doi.org/10.1166/jctn.2008.2456

2008-01-01

Journal of Computational and Theoretical Nanoscience

Abstract:Phonon transport along both cross-plane and in-plane directions in superlattices (SLs) has been investigated by non-equilibrium molecular dynamics simulation. Important factors for thermal transport in SLs, such as size confinement, interface coupling strength, and the atomic mass ratio between the alternating layers are discussed. Simulation results indicate that the energy reflection coefficient depends on the coupling strength at the interface between the two alternating layers. Higher coupling strength leads to a higher possibility for phonons to pass through the interface, and hence larger cross-plane and in-plane thermal conductivities. However, for SLs with large acoustic impedance mismatch between the alternating layers, in-plane thermal conductivities vary only marginally with the coupling strength, which implies that for such SLs, boundary scattering dominates phonon transport along the in-plane direction. Based on the simulation results, a more precise model for predicting the energy reflection coefficient is proposed, in which the phonon incident angle at the interface is considered.
Effect of Superlattice on The Thermal Resistance of Aluminum and Silicon Interface

Yi ZANG,Deng-Ke MA,Nuo YANG

2017-01-01

Journal of Engineering Thermophysics

Abstract:In recent years,improving the micro/nano electronic devices heat dissipation and the thermal transport properties of the material interfaces has become a widespread concern.The important reason is that the thermal interface resistance results in the micro/nano electronic devices heating,which restricts the devices' performance.So we propose a method to decrease the thermal interface resistance by using superlattice structure.In this paper,the thermal interface resistance between Al and SisL was simulated by a non-equilibrium molecular dynamics method.Our results show that using SiSL can decrease the thermal interface resistance obviously.And we also give some theory analysis,it is better for us to understand the mechanism of the interfacial heat transfer.
Effects of interfaces on the thermal conductivity in Si/Si0.75Ge0.25 multilayer with varying Au layers

Yangsen Hu,Zhenghua Wu,Fengjie Ye,Zhiyu Hu

DOI: https://doi.org/10.1088/2053-1591/aaae4a

IF: 2.025

2018-01-01

Materials Research Express

Abstract:The manoeuvre of thermal transport property across multilayer films with inserted metal layers through controlling the metal-nonmetal interfaces is of fundamental interest. In this work, amorphous Si/Si0.75Ge0.25 multilayer films inserted with varying Au layers were fabricated by magnetron sputtering. The structure and sharp interface of multilayers films were characterized by low angle x-ray diffraction (LAXRD), grazing incidence small angle x-ray scattering (GISAXS) and scanning electron microscopy (SEM). A differential 3 omega method was applied to measure the effective thermal conductivity. The measurements show that thermal conductivity has changed as varying Au layers. Thermal conductivity increased from 0.94 to 1.31Wm(-1) K-1 while Si0.75Ge0.25 layer was replaced by different Au layers, which was attributed to the strong electron-phonon coupling and interface thermal resistance in a metal-nonmetal multilayered system. Theoretical calculation combined with experimental results indicate that the thermal conductivity of the multilayer film could be facilely controlled by introducing different number of nanoconstructed metal-nonmetal interfaces, which provide a more insightful understanding of the thermal transport manipulation mechanism of the thin film system with inserting metal layers.
Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

J ZI,W LUDWIG,KM ZHANG,X XIE

DOI: https://doi.org/10.1103/physrevb.51.7886

1995-01-01

Abstract:By means of a supercell technique, the Raman spectra of Si/Ge superlattices with alloyed interfaces are calculated. The appearance of the Si-Ge LO peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, observed in Raman experiments, is found to originate from the formation of interface SiGe alloys. For two transverse polarizations the so-called interface modes are affected by the interface alloyed layers in different ways: For the perfect interfaces there is a Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for one transverse polarization due to the contribution from the interface mode. No Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ exists in another transverse polarization. With the introduction of interface alloying, the 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ Raman peak existing for perfect interfaces decreases its intensity, while a Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ appears in that polarization in which there is no peak in the case of perfect interfaces.
Phonon Transmission Across the Si–Ge Interface

yunfei chen,jinhan lou,kedong bi

DOI: https://doi.org/10.1166/jnn.2015.9634

2015-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Interfaces play an important role in nanostructured structures, which have been widely employed to improve the efficiency of thermoelectric materials. Knowledge of how each specific phonon is scattered at an interface are desired to develop novel nanostructured materials with desired thermal properties. Phonon transmission across the interface consisting of silicon (Si) and germanium (Ge) is investigated by using lattice dynamics. It is found that there exists a critical phonon frequency for the thermal transport across the Si-Ge interface. When the phonon frequency is higher than 198 cm(-1), the phonon transmission coefficient is considerably low, which mean that phonons with higher frequencies contribute little to the thermal transport across the Si-Ge interface. While the phonon frequency goes lower than 198 cm(-1), the phonon transmission coefficient becomes much higher, inferring that phonons with lower frequencies contribute dominantly to the thermal conductance at the Si-Ge interface. This is helpful for understanding the underlying mechanisms of phonon transmission across a Si-Ge interface.
Effects of heat flux on thermal conductivities of superlattice structure using molecular dynamics simulation

Xingli ZHANG,Xiande WU

DOI: https://doi.org/10.11990/jheu.201602006

2017-01-01

Abstract:The heat transfer performances of superlattice structure materials play a crucial role in several applications,including thermoelectrics,microelectronics,and optoelectronics.In this study,the effects of heat flux on the thermal conductivity of a superlattice structure were researched by nonequilibrium molecular dynamics simulation.Tersoff potential function was employed to describe the interaction between Si and Ge particles in a superlattice structure.A steady heat transfer simulation model adapted to the Si/Ge superlattice structure was framed.The values and directions of heat flux exerted by the Si/Ge superlattice structure greatly affected the thermal conductivity based on the investigation on the temperature profile along the direction of heat flux.The simulative results indicate that the thermal conductivity increased with the increase in heat flux.In addition,the non-Fourier thermal conductance may occur under large heat flux and temperature.The thermal conductivity of the Si→Ge system was larger than that of the Ge→Si system.
Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit

Peixuan Chen,N. A. Katcho,J. P. Feser,Wu Li,M. Glaser,O. G. Schmidt,David G. Cahill,N. Mingo,A. Rastelli

2013-01-01

Abstract: We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally results from Ge segregation during growth, plays a determinant role, lowering the thermal conductivity below what could be achieved without interdiffusion (perfect superlattice), or with total interdiffusion (alloy limit). This phenomenon is similar to the one previously observed in alloys with embedded nanoparticles, and it stresses the importance of combining alloy and nanosized scatterers simultaneously to minimize thermal conductivity. Our calculations thus suggest that superlattices with sharp interfaces, which are commonly sought but difficult to realize, are worse than compositionally-modulated Si1-xGex multilayers in the search for materials with ultralow thermal conductivities.
Phonon Transport of Rough Si/Ge Superlattice Nanotubes

Yuhang Jing,Ming Hu

DOI: https://doi.org/10.3970/cmc.2013.038.043

2013-01-01

Abstract:Nanostructuring of thermoelectric materials bears promise for manipulating physical parameters to improve the energy conversion efficiency of thermoelectrics. In this paper the thermal transport in Si/Ge superlattice nanotubes is investigated by performing nonequilibrium molecular dynamics simulations aiming at realizing low thermal conductivity by surface roughening. Our calculations revealed that the thermal conductivity of Si/Ge superlattice nanotubes depends non-monotonically on periodic length and increases as the wall thickness increases. However, the thermal conductivity is not sensitive to the inner diameters due to the strong surface scattering at thin wall thickness. In addition, introducing roughness onto the superlattice nanotubes surface can destroy the phonon tunneling in superlattice nanotubes, which results in thermal conductivity even surpassing amorphous limit. Furthermore, a nonmonotonic dependence of the thermal conductivity of rough Si/Ge superlattice nanotubes with thicker wall thickness is found, while for thinner wall the thermal conductivity of rough Si/Ge superlattice nanotubes decreases monotonically with surface roughness increasing. Our results provide guidance for designing high performance thermoelectrics using superlattice nanotube.
Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Manoj Settipalli,Vitaly S Proshchenko,Sanghamitra Neogi

DOI: https://doi.org/10.48550/arXiv.2111.12831

2021-11-24

Materials Science

Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.
Strong Interface Scattering Induced Low Thermal Conductivity in Bi-based GeTe/Bi2Te3 Superlattice-Like Materials.

Yang Zhou,Kaijin Huang,Lingjun Zhou,Xiaomin Cheng,Ming Xu,Hao Tong,Xiangshui Miao

DOI: https://doi.org/10.1039/c9ra01485c

IF: 4.036

2019-01-01

RSC Advances

Abstract:Strong interface scattering caused by Bi atoms in Bi-based GeTe/Bi2Te3 superlattice-like materials leads to the decrease of thermal conductivity.
Tuning Phonon Transmission And Thermal Conductance By Roughness At Rectangular And Triangular Si/Ge Interface

Lin Jia,Shenghong Ju,Xingang Liang,Xing Zhang

DOI: https://doi.org/10.1088/2053-1591/3/9/095024

IF: 2.025

2016-01-01

Materials Research Express

Abstract:Using the atomistic Green's functions method in combination with the Landauer formula, we show that the phonon transmission and thermal conductance of periodic rectangular-shaped and triangular-shaped Si/Ge interfaces are both enhanced and tunable by roughness. For triangular-shaped interface, there is maximum phonon transmission and conductance with increasing roughness height, and the conductance can be tuned maximally by 22.3% compared with the flat interface. The maximum conductance of rectangular-shaped interface is enhanced by about 11.1%. The competing mechanisms between the broadening frequency transport window of rough interface and the increasing diffusing phonon scattering at the interface with higher roughness introduce the maximum transmission and conductance. Similar result is also obtained in non-periodic interfaces. The presented results provide insights into the thermal design of interfaces in nanoscale devices.
Thermal Conductivity Reduction Mechanisms in Superlattices

G Chen,C Dames,T Harris,D Borca-Tasiuc,RG Yang,B Yang,WL Liu,D Song,M Takashiri

DOI: https://doi.org/10.1109/ict.2003.1287517

2003-01-01

Abstract:The large thermal conductivity reduction observed in superlattices has led to the reports of significantly increased thermoelectric figure-of-merit by several groups. The mechanisms of thermal conductivity reduction in superlattices were scrutinized from different angles over the last decade. This paper summarizes our current understanding on the heat conduction mechanisms in superlattices. Among several potential mechanisms, the interface scattering, particularly diffuse interface scattering, plays the most important role. Conclusions drawn from the studies on superlattices have implications to other nanostructured thermoelectric materials.
Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Xiaohan Liu,Daming Huang,Zuimin Jiang,Xun Wang

DOI: https://doi.org/10.1103/PhysRevB.53.4699

IF: 3.7

1996-01-01

Physical Review B

Abstract:The dispersion curves and scattering efficiency of folded longitudinal acoustic phonons in semiconductor superlattices with broadend interfaces have been calculated by solving the elastic wave and diffusion equations simultaneously. The Raman spectra were measured from Si1-xGex/Si superlattices with different interface widths acid were analyzed in detail. The energy gap near the edge of the Brillouin zone is observed to shrink with interface width, in quantitative agreement with the theoretical calculation. Although the scattering intensity is a complicated function of superlattice structure, phonon branch index, and its wave vector, the change in intensity with interface width is similar to that predicted by a simpler model. The diffusion coefficient as a function of temperature and the activation energy for interdiffusion are derived by comparing the measured Raman intensities with the calculated results.

The effect of interface angle on the thermal conductivity of Si/Ge superlattices

Role Of Surface-Segregation-Driven Intermixing On The Thermal Transport Through Planar Si/Ge Superlattices

Impacts of Cone-Structured Interface and Aperiodicity on Nanoscalethermal Transport in Si/Gesuperlattices

Heat Conduction in Si/Ge Superlattices: A Molecular Dynamics Study

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

The Out-of-plane Thermal Conductivity of Si/Ge Superlattice Based On the Serious Model

Interface thermal conductance and the thermal conductivity of multilayer thin films

Dual Effects of Hetero-Interfaces on Phonon Thermal Transport Across Graphene/c3n Lateral Superlattices

Interface Effects on Lattice Thermal Conductivities of Superlattices

Effect of Superlattice on The Thermal Resistance of Aluminum and Silicon Interface

Effects of interfaces on the thermal conductivity in Si/Si0.75Ge0.25 multilayer with varying Au layers

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Phonon Transmission Across the Si–Ge Interface

Effects of heat flux on thermal conductivities of superlattice structure using molecular dynamics simulation

Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit

Phonon Transport of Rough Si/Ge Superlattice Nanotubes

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Strong Interface Scattering Induced Low Thermal Conductivity in Bi-based GeTe/Bi2Te3 Superlattice-Like Materials.

Tuning Phonon Transmission And Thermal Conductance By Roughness At Rectangular And Triangular Si/Ge Interface

Thermal Conductivity Reduction Mechanisms in Superlattices

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices