Abstract:A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experimental peaks were fully consistent with the calculated results, and were successfully assigned. Bi2O2S was predicted to have more Raman-active modes due to its lower symmetry. The shift of the predicted frequencies of Raman active modes was also found to get softened as the interlayer interaction decreases from bulk to monolayer Bi2O2Se and Bi2O2Te. To reveal the strain effects on the Raman shifts, a universal theoretical equation was established based on the symmetry of Bi2O2Se and Bi2O2Te. It was predicted that the doubly degenerate modes split under in-plane uniaxial/shear strains. Under a rotated uniaxial strain, the changes of Raman shifts are anisotropic for degenerate modes although Bi2O2Se and Bi2O2Te were usually regarded as isotropic systems similar to graphene. This implies a novel method to identify the crystallographic orientation from Raman spectra under strain. These results have important consequences for the incorporation of 2D Bismuth oxychalcogenides into nanoelectronic devices.

Effect of Strain on the Energetics and Kinetics of Dissociation of Sb-4 on Ge(001)

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

The stability of strained H:Si(105) and H:Ge(105) surfaces

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Two-stage Rotation Mechanism for Group-V Precursor Dissociation on Si(001).

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Impact of strain and surface reconstruction on long-range diffusion of Ge atoms on Ge(111) surface

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

Lattice-Dynamics Of Strained Si/Ge Superlattices

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION

Strain Affected Electronic Properties of Bilayer Tungsten Disulfide

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Surfactant Influence on the Ge Heteroepilayer on Si(0 0 1) Studied by X-ray Diffraction and Atomic Force Microscopy

Strain study of partially relaxed Ge epilayers on Si (100) substrate

First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide

Local Lattice Distortion of Ge Impurity in Si (001): Multiple-Scattering Exafs Study

Strengthening and Weakening by Dislocations in Monolayer MoS2