Abstract:The thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si bilayered systems was investigated. In the Ni/Pt/(111)Si system, the NiSi films formed at 640 degreesC have an epitaxial relationship of (100)NiSi parallel to (111)Si and [0 (1) over bar0]NiSi parallel to [01 (1) over bar ]Si with the substrates. On the other hand, those formed on (100)Si substrates were polycrystalline although the experimental parameters are the same as those in Ni/Pt/(111)Si samples. In both cases, NiSi and PtSi formed a solid solution Ni1-xPtxSi following Vegard's law. While the thermal stability of NiSi films is improved in both cases compared with the Ni/Si system, the thermal stability of the textured NiSi films formed on (111)Si substrates is higher than their polycrystalline counterparts formed on (100)Si substrates. This is attributed to the reduced interfacial energy and consequently increased activation energy for the nucleation of NiSi2 due to the formation of textured NiSi films on (111)Si substrates. At 900 degreesC, the Ni(Pt)Si film formed in Ni/Pt/(100)Si system decomposed into separate phases of NiSi and PtSi with noticeable lattice deformation. Differences between the texture evolution of NiSi films in Ni/Pt/Si and Ni(Pt) alloy/Si systems were also reported and explained from both kinetic and thermodynamic aspects. (C) 2001 American Institute of Physics.

Study on Thermal Stability of Thin CoSi2 Film

Thermal stability improvement of ultrathin CoSi2 film formed by TiN capping layer and Co/Ti/Si ternary solid phase reaction

The Influence of Ti and TiN on the Thermal Stability of CoSi2.

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Formations and Morphological Stabilities of Ultrathin Cosi2 Films

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Improvement Of The Thermal Stability Of Nisi Films By Using A Thin Pt Interlayer

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

CoSi2 Formation Using Ti-capping Layer

Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Comparison Of The Thermal Stability Of Nisi Films In Ni/Pt/(111)Si And Ni/Pt/(100)Si Systems

Thermal Stability of Multilayer Films Pt/Si, W/Si, Mo/Si, and W/C

Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)

Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates