Epitaxy of Ultrathin Nisi2 Films with Predetermined Thickness
Xindong Gao,Joakim Andersson,Tomas Kubart,Tomas Nyberg,Ulf Smith,Jun Lu,Lars Hultman,Andrew J. Kellock,Zhen Zhang,Christian Lavoie,Shi-Li Zhang
DOI: https://doi.org/10.1149/1.3580618
2011-01-01
Electrochemical and Solid-State Letters
Abstract:This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3580618] All rights reserved.