Abstract:The influence of boron (B)/arsenic (As) on X-ray photoelectron spectroscopy (XPS) study of NiSi formation on shallow junctions is investigated in this paper. The Ni-silicide film was formed after 30s soak anneal at 450°C on ultra shallow p+/n or n+/p junctions. The atomic ratio of Ni/Si profile in depth was probed by XPS and the results show that a uniform NiSi layer forms on B-doped p+/n junction while a non-uniform, Ni-rich silicide layer forms on As-doped n+/p junction. It does not agree with the results of other independent phase identification methods such as X-ray diffraction, Rutherford backscattering spectroscopy, and Raman scattering spectroscopy, which all demonstrate the formation of NiSi on both n+/p and p+/n junctions. Comparing the raw binding energy spectra of Ni and Si for each silicide film, the similar spectra for Ni signals are revealed. But the Si signals with an obviously smaller intensity is found to be responsible for the apparent Ni rich silicide formation on As-doped n+/p junction. It indicates that As atoms in the silicide film can affect the sputtering yield of Ni and Si, while no noticeable effect is observed for B atoms. More As atoms than B atoms segregation into the silicide layer is indeed verified by secondary ion mass spectroscopy. And micro-Raman scattering spectroscopy further confirms that the degree of crystallinity for NiSi on n+/p junction is inferior to that on p+/n junction.

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Study of Ni/Si(100) solid-state reaction with Al addition

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Study of Ni/Si(100) solid-state reaction with Y addition

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Investigation of Ni reaction with amorphous SiGeC thin film

Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Film Thickness Dependence of the Nisi-To-Nisi2 Transition Temperature in the Ni/Pt/Si(100) System

Extensive Raman spectroscopic investigation of ultrathin Co 1-xNi xSi 2 films grown on Si(100)

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Enhanced Thermal Stability of NiSi Films on Si(111) Substrates by a Thin Pt Interlayer

Effect of Palladium Addition on Nickel Silicide Formation on Si (111)

Study of Ni/Si(1 0 0) solid-state reaction with Y addition

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

On Epitaxy of Ultrathin Ni1-Xptx Silicide Films on Si(001)

Study of Nickel Silicide Formation on Si(110) Substrate

Electrical and Optical Properties of Li-doped Ni–Si–O Thin Films