Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

Investigation of Ni reaction with amorphous SiGeC thin film

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Investigation of Ni(Pt)/Si-cap/SiGe Solid Phase Reaction

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

The reaction characteristics of ultra-thin Ni films on undoped and doped Si (100)

Ni Induced Crystallization of Amorphous SiGe

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Study of Ni/Si(100) solid-state reaction with Al addition

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Solid-Phase Reaction Between Co, Ni/n-poly-Si0.84Ge0.16 and Schottky Barrier Properties of the Formed Contacts

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Characterization of Ni(Si,Ge) Films on Epitaxial SiGe(100) Formed by Microwave Annealing

Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts