Abstract:NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orientation of film and substrate after annealing at temperatures in the range 400-850 degreesC. Using x-ray diffraction, transmission electron microscopy, and pole-figure measurements, it was found that only the monogermanosilicide phase formed above 450 degreesC and was the only phase still at 850 degreesC. New information regarding the effects of Ge on the silicidation of Ni was also found. Thus, the preferred plane parallel to the surface is (013). Compared to NiSi, Ge suppresses the development of the other planes parallel to the surface except (013). Within this plane, the orientations of the grains pile up in such a way that the configuration NiSi1-xGex[100]//Si1-xGex[100] is avoided, which in the pole-figures leads to broad peaks in-between the substrate [100] and [010]. In addition, peaks indicating the epitaxial alignment NiSi0.8Ge0.2(+/-21-1) or (+/-2-11)//Si0.8Ge0.2(+/-2+/-20) coupled with NiSi0.8Ge0.2(+/-100)approximate to//Si0.8Ge0.2(+/-100) or (0+/-10) were found. Fine structure in the broad peaks is found to be due to lateral epitaxial alignments between grains along their common grain boundary. Based on the nonexistence of NiGe2, the observations are interpreted in terms of Ge preventing the formation of certain Ni-Ge bonds at the interface between NiSi1-xGex and the Si1-xGex substrate.

Characterization of Ni(Si,Ge) Films on Epitaxial SiGe(100) Formed by Microwave Annealing

Investigation of Ni/epi-SiGe layer stacks annealed by microwave heating

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Preparation of CoSi2 using microwave hydrogen plasma annealing

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Microwave Annealing Enhances Formation of Silicon Quantum Dots in Oxide Matrix

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

Investigation of Ni reaction with amorphous SiGeC thin film

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Scanning Tunneling Microscopy Studies Of The Formation And Coarsening Of Manganese Silicides On Si(111)