Abstract:The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices. First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification. Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) <4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability. Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology.

Epitaxy of Ultrathin Nisi2 Films with Predetermined Thickness

Exploitation of a Self-Limiting Process for Reproducible Formation of Ultrathin Ni1−xPtx Silicide Films

Nickel Induced Crystallization of Amorphous Silicon Thin Films

On Epitaxy of Ultrathin Ni1-Xptx Silicide Films on Si(001)

Ultra-thin and Conformal Epitaxial NiSi2 Film on Si Fins by Barrier-Induced Phase Modulation (BPM) Technique

Linköping University Post Print On Epitaxy of Ultrathin Ni 1x Pt x Silicide Films on Si ( 001 )

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Film Thickness Dependence of the Nisi-To-Nisi2 Transition Temperature in the Ni/Pt/Si(100) System

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis

Low Contact Resistivity of Ti/TiN/Al for NiSi2 on Epitaxial Si:P Structure at Full Low-Temperature Process below 450 °C

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Surface-energy Triggered Phase Formation and Epitaxy in Nanometer-Thick Ni1−xPtx Silicide Films

Kinetics and Morphology of Ni1-xPtx-silicide Epitaxy on Si(001)

Crystallization of Nisix in A Body-Centered Cubic Structure During Solid-State Reaction Between an Ultrathin Ni Film and Si(001) Substrate at 150-350 Degrees C

Myth and Facts in the Formation of Ultrathin Ni-Pt Silicide Films

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Understanding Solid-State Interactions: Ultrathin Ni1-xPtx Silicide Films Formed on Si(100)