Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Crystallization of Nisix in A Body-Centered Cubic Structure During Solid-State Reaction Between an Ultrathin Ni Film and Si(001) Substrate at 150-350 Degrees C

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

Silicide Formation by Furnace Annealing of Thin Si Films on Large-Grained Ni Substrates

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Epitaxial growth of NiSi 2 induced by sulfur segregationat the NiSi 2 /Si(100) interface

On Epitaxy of Ultrathin Ni1-Xptx Silicide Films on Si(001)

NiSi2/Si interface chemistry and epitaxial growth mode

Nickel Silicidation On Sulfur Implanted Si(100)

SiO_x Mediated Epitaxial Ternary Silicide (Co_(1-X)ni_x)si_2

Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis

Surface-energy Triggered Phase Formation and Epitaxy in Nanometer-Thick Ni1−xPtx Silicide Films

Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Self-organization of CrSi2 nanoislands on Si(111) and growth of monocrystalline silicon with buried multilayers of CrSi2 nanocrystallites

The Crystallization of Cr–Si–Ni–Al Amorphous Films—nucleation and Growth of Intermetallic Phase Cr(Al,Si)2

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates