Lattice Defect of Interfacial Layer in Superhard TiN/Si3N4 Multilayer Films Studied by Fluorescence X-Ray Absorption Fine Structure

Zhiyun Pan,Zhihu Sun,Zhi Xie,Junhua Xu,Isao Kojima,Shiqiang Wei
DOI: https://doi.org/10.1063/1.2644555
2007-01-01
AIP Conference Proceedings
Abstract:Fluorescence x-ray absorption fine structure (XAFS) is used to study the local structures of super-hard TiN/Si3N4 multilayer films deposited by reactive magnetron sputtering at temperatures of 20, 200, 500 and 800 degrees C. The results clearly reveal the presence of interfacial intermixing between adjacent TiN and Si3N4 layers, composing of TiSixN1-x solid solution with a NaCl-like structure. With the growth temperature increasing from 20 to 500 degrees C, the thickness of interlayer rises from 2.5 to 5.0 angstrom. For the TiN/Si3N4 multilayer film grown at 500 degrees C, the interfacial layer is composed of TiSi0.24N0.76 solid solution, where the Ti-N bond length (2.07 angstrom) is largely shrunk as compared with the value (2.12 angstrom) in the pure TiN layer. When growth temperature rises to 800 degrees C, the composition of interfacial layer becomes TiSi0.30N0.70 and reaches the thickness of 7.8 angstrom. We propose that the TiSixN1-x interlayer with obviously contracted Ti-N bond length is an important hardening factor for the crystalline/amorphous TiN/Si3N4 multilayer films grown at high temperatures.
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