Abstract:In this work, the effects of line edge roughness (LER) of nanometer scale gate pattern, 3 sigma standard deviation ranging from 9nm to 21nm, on MOSFET transistor performance fluctuations are investigated using three dimensional TCAD tools. Inhomogeneous source/drain (S/D) junction profile which is induced by gate LER through self-aligned S/D process is also taken into consideration. Hundreds of 60nm MOSFETs with gate line roughness are simulated in 3D by DESSIS device simulator to evaluate the effects of gate LER on device performance fluctuations. The simulation results reveal that gate pattern without appropriate control of LER may cause severe device performance variation, resulting in negative shift of average threshold voltage, sub-threshold slope degradation, and off state current exponential increase. Besides that, larger gate LER always results in boarder distribution of device characteristics. From simulation results, 3a standard deviation should be controlled below 9nm in order not to significantly degrade device performance and circuit reliability.

A molecular dynamic simulation on boron monomer and boron cluster implantation under line edge roughness

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Impacts of gate line edge roughness on sub 100nm MOSFETs

Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Observation of Boron Doping Induced Surface Roughening in Silicon Molecular Beam Epitaxy

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe

Strengthening boron carbide by doping Si into grain boundaries

The impact of line edge roughness on the stability of a FinFET SRAM

Defects in Ion Implantation and Annealing Studied by Atomistic Model