Abstract:Modern semiconductor applications demand precise laser processing at the nanometer scale, requiring a detailed understanding of phase transitions and structural modifications. Accurate control over laser-induced processes in semiconductors is essential for generating surface structures and modifying surface properties. In this study, we present a numerical investigation of non-equilibrium laser-induced phase transitions in silicon (Si) using a hybrid atomistic-continuum model. The model combines the strengths of Molecular Dynamics (MD) simulations for atomisticscale descriptions of non-equilibrium phase transitions with a continuum approach to account for laser-generated free carriers. This framework captures the generation and diffusion of electronhole pairs, thermal diffusion, and electron-phonon coupling during laser energy deposition. We apply the model to determine the melting depth as a function of fluence for a 100 fs laser pulse at 800 nm. The results show that the stand-alone continuum approach underestimates the melting threshold compared to the hybrid atomistic-continuum model, which incorporates the detailed kinetics of melting. Additionally, we explore the effect of crystal orientation on melting dynamics. Lastly, the MD model is used to identify the conditions leading to the amorphization of the Si surface. These findings provide valuable insights into experimental observations of Si surface structuring induced by ultrashort laser pulses.

INTERPRETATION OF OPTICAL DIAGNOSTICS FOR THE ANALYSIS OF LASER CRYSTALLIZATION OF AMORPHOUS SILICON FILMS

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

[30-years of sport medicine and rehabilitation].

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Formation of nanocrystals in a-Si thin films induced by pulsed laser ultraviolet irradiation

Surface Morphology And Structural Observation Of Laser Interference Crystallized A-Si : H/A-Sinx : H Multilayers

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers