Abstract:This presentation outlines recent research that was carried out at the Laser Thermal Laboratory on the experimental investigation of microscale transport. First, work aiming to understand ultra-fast laser processing of materials will be presented. The thermodynamics of the rapid phase transformations in pulsed laser-induced crystal growth of thin semiconductor films is examined next. The presentation concludes with the description of the thermal velocimetry, a technique for the non-intrusive measurement of flows in buried microchannels. Fundamental questions arise regarding the nature of ablation mechanisms in femtosecond laser processing of materials. A comprehensive experimental study is being pursued to address these issues in depth and detail. The mechanisms of ultra-fast (femtosecond) laser-induced ablation on crystalline silicon are investigated by time- resolved pump-and-probe microscopy. The temporal delay between the pump and probe pulses is set by a precision translation stage up to about 500 ps and then extended to the nanosecond regime by an optical fiber assembly. Ejection of material is observed at several picoseconds to tens of nanoseconds after the main (pump) pulse by high- resolution, ultra-fast shadowgraphs. Recrystallization of thin amorphous silicon (a-Si) films can yield polysilicon (p-Si) material with functional properties suitable for fabrication of electronic devices, including high definition large area active matrix liquid crystal displays. Pulsed laser-effected melting and recrystallization is exceptionally effective since it avoids damage to the underlying insulator structure. The ensuing phase transformations and ultimately the quality of the produced p-Si material strongly depend on the temperature history. This article presents a review of research aiming to understand the complex nucleation, resolidification and crystal growth phenomena that evolve under severely non-equilibrium conditions. It is shown that elucidation of the fundamental thermodynamic processes enables conception of novel practical thin film crystal growth techniques. Infrared thermal velocimetry is a new technique for the measurement of mass flow rate in micro-channels. A sub-millisecond CO2 laser pulse generates a transient temperature response in flowing liquid. Recording the radiative thermal images of the moving heated liquid, permitted measurement of the flow velocity. This method has powerful characteristics; a wide range of maximum velocities (1cm/s ~ 1m/s) in the channel is measured and the applications include MEMS fluidic devices and notably in embedded configurations. In this paper, experimental results are obtained from infrared thermal velocimetry from a syringe forced flow. Numerical results show a fairly good agreement with experimental data within 8%.

A Heat Transfer Algorithm for the Laser-Induced Melting and Recrystallization of Thin Silicon Layers

Heat transfer in thin silicon film melting by laser line sources

Experimental and Computational Analysis of Laser Melting of Thin Silicon Films

A Thermal-Instability In The Laser-Driven Melting And Recrystallization Of Thin Silicon Films On Glass Substrates

Heat Transfer and Phase Transformations in Laser Annealing of Thin Si Films

An Experimental-Study on Laser Annealing of Thin Silicon Layers

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Thermal Transport in Melting and Recrystallization of Amorphous and Polycrystalline Si Thin Films

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

In Situ and Ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing

Transient reflectivity measurements and heat transfer modeling in laser annealing of semiconductor films

Numerical Analysis of Melting and Evaporation Behavior of Molybdenum Layer Irradiated with a Laser Beam.

Heat-Transfer in Excimer-Laser Melting of Thin Polysilicon Layers

INTERPRETATION OF OPTICAL DIAGNOSTICS FOR THE ANALYSIS OF LASER CRYSTALLIZATION OF AMORPHOUS SILICON FILMS

Melting and Resolidification Dynamics of A-Si and Poly-Si Thin Films During Excimer Laser Annealing

Moving Front Fixing in Thin Film Laser Annealing

Transient Heating and Melting Transformations in Argon-Ion Laser Irradiation of Polysilicon Films

High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

EXPERIMENTAL STUDIES OF THERMAL TRANSPORT IN MICROSYSTEMS

Numerical Simulation of Three-dimensional Temperature Field in Laser Melting Process