Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.

In-situ Observation of Laser-induced Melting and Resolidification Dynamics of Si Thin Films

In Situ and Ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing

In Situ Visualization of Interface Dynamics During the Double Laser Recrystallization of Amorphous Silicon Thin Films

A New Double Laser Recrystallization Technique to Induce Ultra-Large Poly-Si Grains

Melting and Resolidification Dynamics of A-Si and Poly-Si Thin Films During Excimer Laser Annealing

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

High resolution laser flash photography for probing the new double laser recrystallization process

Thermal Transport in Melting and Recrystallization of Amorphous and Polycrystalline Si Thin Films

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

Single Shot Excimer Laser Crystallization of Silicon Films Deposited by LPCVD

Ultra-fast laser-induced recrystallization of amorphous silicon films

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs

Heat Transfer and Phase Transformations in Laser Annealing of Thin Si Films

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Single Shot Excimer Laser Crystallization and LPCVD Silicon TFTs

Laser Crystallization of Silicon for High-Performance Thin-Film Transistors

High-resolution Laser Flash Photography for Probing the Solidification of the New Double Laser Recrystallization Process

Controlled Growth of High-Quality Poly-Silicon Thin Films with Huge Grains on Glass Substrates Using an Excimer Laser