Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures

Laser-assisted on Demand Growth of Semiconducting Nanowires and In-Situ Optical Probing of A- Si Crystallization

Pulsed Laser Annealing of Semiconductor Structures for Functional Devices

In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization

Laser-Assisted Nanoprocessing and Growth of Semiconductor Nanostructures

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

In Situ Visualization of Interface Dynamics During the Double Laser Recrystallization of Amorphous Silicon Thin Films

Generation of Single-Crystalline Domain in Nano-Scale Silicon Pillars by Near-Field Short Pulsed Laser

Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Study of Femtosecond Laser Induced Periodic Structure on Amorphous Silicon Films and Crystallization Characteristics

Large Area Crystallization of Amorphous Si with Overlapping High Repetition Rate Laser Pulses

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.

High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

Ultra-fast laser-induced recrystallization of amorphous silicon films

Laser Synthesis and Functionalization of Nanostructures

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Laser Crystallization and Localized Growth of Nanomaterials for Solar Applications

Pulse laser crystallization of silicon carbon thin films

Application of 532 nm solid nanosecond laser in crystallization of amorphous silicon thin films