Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

Nanocrystalline silicon films prepared by laser-induced crystallization

Application of 532 nm solid nanosecond laser in crystallization of amorphous silicon thin films

Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Pulse laser crystallization of silicon carbon thin films

Analysis of the Structure of Laser Crystallized amorphous Silicon Thin Film

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization

Selected Area Laser-Crystallized Polycrystalline Silicon Thin Films by A Pulsed Nd: Yag Laser with 355 Nm Wavelength

Raman Spectroscopy Analysis of Excimer Laser Crystallized Amorphous Silicon Films

High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Laser Crystallization of Silicon for High-Performance Thin-Film Transistors

Relationship Between Fluence Gradient and Lateral Grain Growth in Spatially Controlled Excimer Laser Crystallization of Amorphous Silicon Films

Controlled Growth of High-Quality Poly-Silicon Thin Films with Huge Grains on Glass Substrates Using an Excimer Laser

Effect of excimer laser annealing on the silicon nanocrystals embedded in silicon-rich silicon nitride film

In Situ Visualization of Interface Dynamics During the Double Laser Recrystallization of Amorphous Silicon Thin Films

Single Shot Excimer Laser Crystallization of Silicon Films Deposited by LPCVD

Dynamical Process of Krf Pulsed Excimer Laser Crystallization of Ultrathin Amorphous Silicon Films to Form Si Nano-Dots