Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

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Analysis of the Structure of Laser Crystallized amorphous Silicon Thin Film

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Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

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Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures

Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

Effect of Annealing on SiC Thin Films Prepared by Pulsed Laser Deposition

Room Temperature Crystallization of Amorphous Silicon Film by Ultrashort Femtosecond Laser Pulses

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Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Raman Spectroscopy Analysis of Excimer Laser Crystallized Amorphous Silicon Films

Ultra-fast laser-induced crystallization of amorphous silicon films - (LPM 2001)

The Preparation of Single-Crystal 4H-Sic Film by Pulsed XeCl Laser Deposition

Pulsed Laser Annealing of Semiconductor Structures for Functional Devices

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Ultra-fast laser-induced recrystallization of amorphous silicon films

Selected Area Laser-Crystallized Polycrystalline Silicon Thin Films by A Pulsed Nd: Yag Laser with 355 Nm Wavelength

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity