Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Laser-assisted on Demand Growth of Semiconducting Nanowires and In-Situ Optical Probing of A- Si Crystallization

Ultrafast growth of single-crystalline Si nanowires

Laser-Assisted Nanoprocessing and Growth of Semiconductor Nanostructures

Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures

Laser-Assisted on Demand Growth of Semiconducting Nanowires

In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization

Near-field Laser-Assisted Localized Crystal Growth and Nanodeposition

On Demand-Direct Synthesis of Si and Ge Nanowires on a Single Platform by Focused Laser Illumination

Laser Synthesis and Functionalization of Nanostructures

Tip-based Nanoscale Selective Growth of Discrete Silicon Nanowires by Near-Field Laser Illumination

Multi-Parametric Growth of Silicon Nanowires in A Single Platform by Laser-Induced Localized Heat Sources

LASER PROCESSING OF SEMICONDUCTOR NANOMATERIALS

Pulsed Laser Annealing of Semiconductor Structures for Functional Devices

Laser Crystallization and Localized Growth of Nanomaterials for Solar Applications

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

In Situ Visualization of Interface Dynamics During the Double Laser Recrystallization of Amorphous Silicon Thin Films

Transmission electron microscopy characterizations of local amorphization of single crystal silicon by nanosecond pulsed laser direct writing

Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating