Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Ultrafast growth of single-crystalline Si nanowires

Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

Silicon Nanowires Prepared by Laser Ablation at High Temperature

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

Tiny silicon nano-wires synthesis on silicon wafers

Silicon Nanowire: a New Shape of Crystalline Silicon

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

A LASER ABLATION METHOD FOR THE SYNTHESIS OF SEMICONDUCTOR NANOWIRES

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition

Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide