A LASER ABLATION METHOD FOR THE SYNTHESIS OF SEMICONDUCTOR NANOWIRES

黄正国,周鸣飞,郁章玉

DOI: https://doi.org/10.3969/j.issn.1001-5337.2003.03.022

2003-01-01

Abstract:A laser ablation method for the synthesis of semiconductor nanowires is introduced. The principle, the growth mechanisms (as well as metal-assisted growth and oxide-assisted growth) and the effect factors for growth are introduced in detail.

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

She, J.C.,Xu, C.J.,He, H.,Xu, N.S.

DOI: https://doi.org/10.1109/ivnc.2009.5271636

2009-01-01

Abstract:One dimensional ZnO nanostructures prepared by low temperature solution-phase methods have been investigated for a number of potential applications. In these applications, they take an important function as charge transport path in the devices. Thus, the electrical conductivity, carrier mobility and ZnO-substrate junction are crucial for device performance. One comment way for this purpose is to dope ZnO NWs in synthesis process. However, it is found that doping can be difficult in aqueous systems. It is because the dopant species can easily form aquo ions and not be incorporated into the crystal lattice. Although alternative methods such as post-thermal-annealing can be employed, such a high temperature process is not compatible for most of the devices fabrication procedure. Therefore, it is necessary to develop new techniques for this purpose. Here, the authors report the investigation of effects of pulsed-laser treatment on the conductivity and field emission of ZnO NWs.
A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Alfredo M. Morales,Charles M. Lieber

DOI: https://doi.org/10.1126/science.279.5348.208

IF: 56.9

1998-01-09

Science

Abstract:A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.

multidisciplinary sciences
Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Y. H. Tang,Y. F. Zhang,C. S. Lee,N. Wang,D. P. Yu,I. Bello,S. T. Lee

DOI: https://doi.org/10.1557/PROC-526-73

1998-01-01

Abstract:Quasi one-dimensional materials have attracted considerable attention in recent years because of its potential to both fundamental physics and nanoelectronic applications. More recently, we have achieved large scale synthesis of silicon nanowires (SINW) at a high growth rate by laser ablation of Si target at 1200 °C. The laser source was a pulsed KrF excimer laser and the Si targets were made by pressing Si powder of 5 microns in size. 50 sccm Ar was used as a carrying gas flowing from the side near the Si target towards a water-cooled copper finger. Si nanowires have been grown with diameters ranging from 3 to 43 nm and several hundreds microns in length after 2 hours of laser ablation of Si target. The SLNWs were analyzed by XRD, Raman, EDS, TEM and HRTEM. Successful large scale synthesis of SINW by laser ablation extends the pulsed laser ablation method from depositing thin films to synthesis of nanowires.
Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Elena P. Pandres,Matthew J. Crane,E. James Davis,Peter J. Pauzauskie,Vincent C. Holmberg

DOI: https://doi.org/10.48550/arXiv.2007.09305

2020-07-18

Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Applied Physics,Mesoscale and Nanoscale Physics
Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

DP Yu,CS Lee,I Bello,XS Sun,YH Tang,GW Zhou,ZG Bai,Z Zhang,SQ Feng

DOI: https://doi.org/10.1016/s0038-1098(97)10143-0

IF: 1.934

1998-01-01

Solid State Communications

Abstract:We report below synthesis of nano-scale silicon wires by using laser ablation at high temperature. By this approach we have been able to produce silicon nano wires (SiNW's) with a very high yield, a uniform diameter distribution and a high purity. The structure, morphology and chemical composition of the SiNWs have been characterized by using high resolution X-ray diffraction (XRD), high resolution electron microscopy (HREM), as well as spectroscopy of energy dispersive X-ray fluorescence (EDAX). Our results should be of great interest to researchers working on mesoscopic physical phenomena, such as quantum confinement effects related to materials of reduced dimensions and should lead to the development of new applications for nano-scale devices, together with providing a powerful method for synthesis of similar one-dimensional conducting and semi-conducting wire.
A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

Yue Shen,Jung-Il Hong,Sheng Xu,Shisheng Lin,Hao Fang,Su Zhang,Yong Ding,Robert L. Snyder,Zhong Lin Wang

DOI: https://doi.org/10.1002/adfm.200901546

IF: 19

2010-01-01

Advanced Functional Materials

Abstract:Here, a new method is demonstrated that uses sideways pulsed laser deposition to deliberately nanowires into a desired shape after growth and fabricate are shaped composite nanowire arrays of a wide range of nanomaterials. The starting nanowires can be ZnO, but the materials to be deposited can be metallic semiconductor, or ceramic depending on the application. This method provides a general approach for rational fabrication of a wide range of side be sire or "core-shell" nanowire arrays with controllable degree of bending and internal strain. Considering the ZnO is a piezoelectric and semiconductive materials, its electric properties change when deformed. Thus technique has potential applications in tunable electronics, optoelectronics, and piezotronics.
Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation

Guangwen Zhou,Ze Zhang,Dapeng Yu

DOI: https://doi.org/10.1016/S0022-0248(98)00929-4

IF: 1.8

1999-01-01

Journal of Crystal Growth

Abstract:Si nanowires (SiNWs) synthesized by laser ablation method exhibit different morphological characteristics such as straight, curved, kink, braided, and coiled shapes. These morphologies and their corresponding micro-structural aspects were examined in some details by transmission electron microscopy (TEM). It is found that the formation of various morphologies of SiNWs is closely related to the insertion of twins or the spatial twisting along the growth direction during the growth process of SiNWs.
Controlled Growth of ZnO Nanowires by Nanoparticle-Assisted Laser Ablation Deposition

T. Okada,R. Guo,J. Nishimura,M. Matsumoto,M. Higashihata,D. Nakamura

DOI: https://doi.org/10.1117/12.760922

2008-01-01

Abstract:Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N-2 background gases. In NAPLD, the nanoparticles formed in a background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N-2 background gas was excited by 355 run laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.
Silicon Nanowires Prepared by Laser Ablation at High Temperature

YF Zhang,YH Tang,N Wang,DP Yu,CS Lee,I Bello,ST Lee

DOI: https://doi.org/10.1063/1.121199

IF: 4

1998-01-01

Applied Physics Letters

Abstract:Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon.
Innovative Multiphase Ultrasonic-Assisted Method for High-Purity, Stable, and Cost-Effective Copper Nanowire Synthesis

Shuxin Li,Hongyan Hang,Xiaohui Xia,Lili Ge,Deren Yang

DOI: https://doi.org/10.1007/s43939-024-00140-3

2024-01-01

Discover Materials

Abstract:The synthesis of copper nanowires (CuNWs) using modified polyols with hexadecylamine or octadecylamine as capping agents, known for their ease of operation, rapid reaction, and suitability for mass production, often encounters challenges such as the presence of copper particles, numerous copper nanorods, difficulty in purifying organic compounds, and air instability as by-products. In addressing these issues, this study introduces an innovative multiphase ultrasonic-assisted separation method. By utilizing ultrasound to accelerate the dissolution of hexadecylamine and facilitate the separation movement of CuNWs and by-products in hydrophilic and hydrophobic phases, the aim of achieving high purification of CuNWs is realized. Through the introduction of an ultra-thin hexadecylamine layer ( 3.5 nm) on the surface of CuNWs and leveraging the active adsorption of silver seed crystals, combined with the control CuNWs reaction concentration, silver-coated CuNWs with a dense and uniform surface thickness of 12–15 nm are obtained. By enhancing purity, stability, and cost-effectiveness, this research represents a significant advancement in the field of one-dimensional nanowires and their devices.
Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

JJ Niu,J Sha,ZH Liu,ZX Su,J Yu,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.04.040

2004-01-01

Abstract:Thin silicon nano-wires (SiNWs) with a diameter of ∼10–20nm were fabricated by a simple thermal evaporation of silicon wafer at 1523K. The gold produced by an electrochemical method was covered on the wafer surface as catalyst. It was found that the SiNWs are amorphous and its Raman peak shifted down maybe due to the effect of laser heating and quantum confinement. Finally, a temperature gradient growth model is suggested to explain the growth direction of SiNWs.
A Simple Method To Synthesize Nanowires

Yingjiu Zhang,Nanlin Wang,Shangpeng Gao,Rongrui He,Shu Miao,Jun Liu,Jing Zhu,X. Zhang

DOI: https://doi.org/10.1021/cm0201697

IF: 10.508

2002-01-01

Chemistry of Materials

Abstract:By a simple method, that is, by heating raw materials in a flowing gas at ambient pressure, Si3N4, Ga2O3, and ZnO nanowires, SiC nanocables, and SiO2 amorphous nanowires are synthesized without metal catalysts. The diameters of these one-dimensional nanoscale materials are greatly affected by synthesis temperatures. At suitable synthesis temperatures, their diameters are <100 nm. The growth mechanisms of these nanowires are discussed preliminarily.
Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

Xiaowei Liu,Pengfei Xu,Yuanpeng Wu,Zongyin Yang,Chao Meng,Weisong Yang,Jiabei Li,Delong Wang,Xu Liu,Qing Yang

DOI: https://doi.org/10.1016/j.nanoen.2014.11.044

IF: 17.6

2014-01-01

Nano Energy

Abstract:Semiconductor nanowire (SNW) lasers have great potential applications in high density data storage, single molecule detection, direct RNA and DNA sequencing and integrated optoelectronic circuits etc. While for their practical applications, control and optimization of the parameters are of great significance and have been attracting growing interests in the past years. Here we present a review of the key parameters control and optimization about SNW lasers. After introducing the background of NW lasers in the first two chapters, wavelength control, mode optimization, threshold reduction and polarization measurement and modulation will be demonstrated in the following text successively. Finally, we will give a perspective on SNW lasers research to address important future directions and challenges for further enrichment of this emerging area.
A General Approach for Fabricating Arc‐Shaped Composite Nanowire Arrays by Pulsed Laser Deposition

Yue Shen,Jung-Il Hong,Sheng Xu,Shisheng Lin,Hao Fang,Su Zhang,Yong Ding,Robert L. Snyder,Zhong Lin Wang

DOI: https://doi.org/10.1002/adfm.200901546

IF: 19

2010-01-01

Advanced Functional Materials

Abstract:Here, a new method is demonstrated that uses sideways pulsed laser deposition to deliberately bend nanowires into a desired shape after growth and fabricate arc‐shaped composite nanowire arrays of a wide range of nanomaterials. The starting nanowires can be ZnO, but the materials to be deposited can be metallic, semiconductor, or ceramic depending on the application. This method provides a general approach for rational fabrication of a wide range of side‐by‐side or “core–shell” nanowire arrays with controllable degree of bending and internal strain. Considering the ZnO is a piezoelectric and semiconductive material, its electrical properties change when deformed. This technique has potential applications in tunable electronics, optoelectronics, and piezotronics.
Silicon Nanowire Synthesis by Chemical Vapor Deposition

王永成,唐静,郑耿锋

DOI: https://doi.org/10.1360/032013-241

2013-01-01

Scientia Sinica Chimica

Abstract:Semiconducting silicon nanowires (SiNWs) represent one of the most interesting research directions in nanoscience and nanotechnology, and have been successfully applied in the fields of biological sensing, lithium-ion battery, solar cells and so on, with capabilities of realizing structural and functional complexity through rational design and synthesis. Chemical vapor deposition (CVD) method is one of the most common methods in the bottom-up approach. This review provides a brief summary of SiNW synthesis through the CVD method in the past decade, which mainly divided into the single structured and complex structured SiNWs. The synthesis of single structured SiNWs includes intrinsic, doped, and super-long SiNWs. The synthesis of complex structured SiNWs includes the axial, radial heterostructures, kinked, and branched SiNWs.
Synthesis of ZnO Nanowires by Nanoparticle-Assisted Pulsed-Laser Deposition and Optical Characteristics of Single ZnO Nanowire

Jun NISHIMURA,Masato MATSUMOTO,Mitsuhiro HIGASHIHATA,Ruiqian GUO,Tatsuo OKADA

DOI: https://doi.org/10.2184/lsj.36.499

2008-01-01

The Review of Laser Engineering

Abstract:Technique for synthesis of the ZnO nanowires by Nanoparticle-Assisted Pulsed-Laser Deposition (NAPLD) and the characterization of their optical property are described. Vertically-aligned ZnO nanowires were successfully grown on sapphire substrates by NAPLD without any catalyst. The surface density of the nanowires on the substrate was controlled by changing the laser irradiation conditions, such as an energy and a repetition rate. When a nanowire was excited by the third harmonic of a Q-switched Nd:YAG laser, the stimulated emission due to a micro-cavity effect in single nanowire was observed with a lasing threshold of about 400 kW/cm2, indicating high crystalinity of ZnO nanowires.
Aligned Growth of ZnO Nanowires by Laser Ablation and Their Applications

Tatsuo Okada,Ruiqian Guo,Jun Nishimura,Masato Matsumoto,M. Higashihata,D. Nakamura

DOI: https://doi.org/10.2351/1.5057134

2008-01-01

Abstract:Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet photo-sensor, field emitters and an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.
Solution-Liquid-Solid Growth of Semiconductor Nanowires

Fudong Wang,Angang Dong,Jianwei Sun,Rui Tang,Heng Yu,William E. Buhro

DOI: https://doi.org/10.1021/ic060498r

IF: 4.6

2006-01-01

Inorganic Chemistry

Abstract:The serendipitously discovered solution-liquid-solid (SLS) mechanism has been refined into a nearly general synthetic method for semiconductor nanowires. Purposeful control of diameters and diameter distributions is achieved. The synthesis proceeds by a solution-based catalyzed-growth mechanism in which nanometer-scale metallic droplets catalyze the decomposition of metallo-organic precursors and crystalline nanowire growth. Related growth methods proceeding by the analogous vapor-liquid-solid (VLS) and supercritical fluid-liquid-solid (SFLS) mechanisms are known, and the relative attributes of the methods are compared. In short, the VLS method is most general and appears to afford nanowires of the best crystalline quality. The SLS method appears to be advantageous for producing the smallest nanowire diameters and for variation and control of surface ligation. The SFLS method may represent an ideal compromise. Recent results for SLS growth are summarized.
Plausible Colloidal Methods to Synthesize Semiconductor Nanowires: Deep Study From ZnSe Nanorods

Chunyu Yu,Yibo Li,Yue Qin,Yinghui Wang,Jiajia Ning

DOI: https://doi.org/10.1002/smll.202408938

IF: 13.3

2024-11-24

Small

Abstract:There are two possible schemes for obtaining nanowires. During anisotropic growth, the tips of nanorods can be etched by introducing appropriate chemicals to actively activate the growth sites, thus enabling continuous anisotropic growth. In the directed attachment method, appropriate amines and controlled reaction conditions can modulate dipole‐dipole interactions, thereby facilitating the controlled formation of connections between nanorods. When the diameter of semiconductor nanowires is below the Bohr radius, confined excitons in the radial direction can freely move along the elongated axis direction, highlighting their potential for applications in quantum information and optoelectronic devices. Controlled anisotropic growth and oriented attachment are viable strategies for producing ultra‐long semiconductor nanowires with precisely controlled lengths and diameters. Anisotropic ZnSe nanorods are used as the initial seeds for the controlled anisotropic growth and oriented attachment methods. ZnSe nanorods/nanowires with limiting lengths of tens to hundreds of nanometers are produced. The advantages and limitations of semiconductor nanowires via controlled anisotropic growth and oriented attachment are summarized. The perspective for the promotion of controlled anisotropic growth and oriented attachment is discussed, which allows to promotion of the precise synthesis of semiconductor ultra‐long nanowires to develop the fundamental research and applications of ultra‐long semiconductor nanowires.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

A LASER ABLATION METHOD FOR THE SYNTHESIS OF SEMICONDUCTOR NANOWIRES

Ultrafast growth of single-crystalline Si nanowires

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation

Controlled Growth of ZnO Nanowires by Nanoparticle-Assisted Laser Ablation Deposition

Silicon Nanowires Prepared by Laser Ablation at High Temperature

Innovative Multiphase Ultrasonic-Assisted Method for High-Purity, Stable, and Cost-Effective Copper Nanowire Synthesis

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

A Simple Method To Synthesize Nanowires

Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

A General Approach for Fabricating Arc‐Shaped Composite Nanowire Arrays by Pulsed Laser Deposition

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Synthesis of ZnO Nanowires by Nanoparticle-Assisted Pulsed-Laser Deposition and Optical Characteristics of Single ZnO Nanowire

Aligned Growth of ZnO Nanowires by Laser Ablation and Their Applications

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Plausible Colloidal Methods to Synthesize Semiconductor Nanowires: Deep Study From ZnSe Nanorods