Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Ultrafast growth of single-crystalline Si nanowires

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Laser-Assisted on Demand Growth of Semiconducting Nanowires

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

Silicon Nanowires Prepared by Laser Ablation at High Temperature

A LASER ABLATION METHOD FOR THE SYNTHESIS OF SEMICONDUCTOR NANOWIRES

On Demand-Direct Synthesis of Si and Ge Nanowires on a Single Platform by Focused Laser Illumination

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

Laser Synthesis and Functionalization of Nanostructures

Large Scale Synthesis of Α-Si3n4 Nanowires Through a Kinetically Favored Chemical Vapour Deposition Process

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Atomistics of vapor-liquid-solid nanowire growth

Laser-assisted on Demand Growth of Semiconducting Nanowires and In-Situ Optical Probing of A- Si Crystallization

Laser-Assisted Nanoprocessing and Growth of Semiconductor Nanostructures

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.

LASER PROCESSING OF SEMICONDUCTOR NANOMATERIALS

Extended vapor-liquid-solid growth of silicon carbide nanowires

Synthesis of Silicon Oxide Nanowires by Chemical Vapor Deposition