[Diagnosis and treatment of 56 carcinoma of gallbladder].

Yu Wen,Yong-Guo Li,X. Miao

2004-10-01

Abstract:

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Ultrafast synthesis of SiC nanowire webs by floating catalysts rationalised through in-situ measurements and thermodynamic calculations

Isabel Gómez-Palos,Miguel Vazquez-Pufleau,Jorge Valilla,Álvaro Ridruejo,Damien Tourret,Juan J. Vilatela

DOI: https://doi.org/10.48550/arXiv.2212.02901

2022-12-06

Materials Science

Abstract:This work presents the synthesis of SiC nanowires floating in a gas stream through the vapour-liquid-solid (VLS) mechanism using an aerosol of catalyst nanoparticles. These conditions lead to ultrafast growth at 8.5 {\mu}m/s (maximum of 50 {\mu}m/s), which is up to 3 orders of magnitude above conventional substrate-based chemical vapour deposition. The high aspect ratio of the nanowires (up to 2200) favours their entanglement and the formation of freestanding network materials consisting entirely of SiCNWs. The floating catalyst chemical vapour deposition growth process is rationalised through in-situ sampling of reaction products and catalyst aerosol from the gas phase, and thermodynamic calculations of the bulk ternary Si-C-Fe phase diagram. The phase diagram suggests a description of the mechanistic path for the selective growth of SiCNWs, consistent with the observation that no other types of nanowires (Si or C) are grown by the catalyst. SiCNW growth occurs at 1130 {\deg}C, close to the calculated eutectic. According to the calculated phase diagram, upon addition of Si and C, the Fe-rich liquid segregates a carbon shell, and later enrichment of the liquid in Si leads to the formation of SiC. The exceptionally fast growth rate relative to substrate-based processes is attributed to the increased availability of precursors for incorporation into the catalyst due to the high collision rate inherent to this new synthesis mode.
Atomistics of vapor-liquid-solid nanowire growth

Hailong Wang,Luis A. Zepeda-Ruiz,George H. Gilmer,Moneesh Upmanyu

DOI: https://doi.org/10.1038/ncomms2956

2013-05-01

Abstract:Vapor-liquid-solid (VLS) route and its variants are routinely used for scalable synthesis of semiconducting nanowires yet the fundamental growth processes remain unknown. Here, we employ atomic-scale computations based on model potentials to study the stability and growth of gold-catalyzed silicon nanowires (SiNWs). Equilibrium studies uncover segregation at the solid-like surface of the catalyst particle, a liquid AuSi droplet, and a silicon-rich droplet-nanowire interface enveloped by heterogeneous truncating facets. Supersaturation of the droplets leads to rapid 1D growth on the truncating facets and much slower nucleation-controlled 2D growth on the main facet. Surface diffusion is suppressed and the excess Si flux occurs through the droplet bulk which, together with the Si-rich interface and contact line, lowers the nucleation barrier on the main facet. The ensuing step flow is modified by Au diffusion away from the step edges. Our study highlights key interfacial characteristics for morphological and compositional control of semiconducting nanowire arrays.

Materials Science
Mass Transport Determined Silica Nanowires Growth on Spherical Photonic Crystals with Nanostructure-Enabled Functionalities

Juan Wang,Eiko Y Westerbeek,Albert van den Berg,Loes I Segerink,Lingling Shui,Jan C T Eijkel

DOI: https://doi.org/10.1002/smll.202001026

IF: 13.3

Small

Abstract:A robust and facile method has been developed to obtain directional growth of silica nanowires (SiO2 NWs) by regulating mass transport of silicon monoxide (SiO) vapor. SiO2 NWs are grown by vapor-liquid-solid (VLS) process on a surface of gold-covered spherical photonic crystals (SPCs) annealed at high temperature in an inert gas atmosphere in the vicinity of a SiO source. The SPCs are prepared from droplet confined colloidal self-assembly. SiO2 NW morphology is governed by diffusion-reaction process of SiO vapor, whereby directional growth of SiO2 NWs toward the low SiO concentration is obtained at locations with a high SiO concentration gradient, while random growth is observed at locations with a low SiO concentration gradient. Growth of NWs parallel to the supporting substrate surface is of great importance for various applications, and this is the first demonstration of surface-parallel growth by controlling mass transport. This controllable NW morphology enables production of SPCs covered with a large number of NWs, showing multilevel micro-nano feature and high specific surface area for potential applications in superwetting surfaces, oil/water separation, microreactors, and scaffolds. In addition, the controllable photonic stop band properties of this hybrid structure of SPCs enable the potential applications in photocatalysis, sensing, and light harvesting.
A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

JJ Niu,J Sha,ZH Liu,J Yu,ZX Su,Q Yang,DR Yang

DOI: https://doi.org/10.1109/sim.2005.1511409

2004-01-01

Abstract:A large-scale SiNWs with the diameter of /spl sim/20-30 nm and the length of tens of micrometers formed on silicon substrates using a novel evaporation of sulfides (sulphur and zinc sulfide) at /spl sim/1080/spl deg/C were synthesized; The source of SiNWs came from silicon wafers rather than silane gas as reported before. It was found that the tip of SiNWs contained sulfur, while the other positions of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. As referring to the oxygen-assisted growth model of SiNWs by evaporation of silicon oxide, a corresponding sulfide-assisted model was suggested.
Phase-controlled Synthesis of Nickel Silicide Nanostructures

Xing Fan,Hui Zhang,Ning Du,Deren Yang

DOI: https://doi.org/10.1016/j.materresbull.2012.06.017

IF: 5.6

2012-01-01

Materials Research Bulletin

Abstract:Dense single-crystalline Ni2Si nanowires, Ni3Si2 nanowires and nanorods, and NiSi nanowires have been successfully synthesized in large-scale on the surface of Ni foam via a simple chemical vapor deposition of SiH4 at 450–600°C. It is indicated that the reaction temperature and the flow rate of SiH4 play an important role in the control of phases and morphologies of nickel silicide nanostructures. The temperature controls the balance of Ni-diffusion and the degree of supersaturation of Si in Ni, thus producing different nickel silicide phases, whereas the different flow rates of SiH4 lead to the different nickel silicide morphologies by controlling the size and the quality of the nucleation centers. We expect that our synthesis approach and results will provide valuable information for the fabrication and application of other metal silicide nanostructures.
Plasma-Enhanced Low Temperature Growth of Silicon Nanowires and Hierarchical Structures by Using Tin and Indium Catalysts

Linwei Yu,Benedict O'Donnell,Pierre-Jean Alet,S. Conesa-Boj,F. Peiro,J. Arbiol,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1088/0957-4484/20/22/225604

IF: 3.5

2009-01-01

Nanotechnology

Abstract:Plasma-enhanced low temperature growth (<300 degrees C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H-2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degrees C have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs.
Multi-Nucleation of Single-Walled Carbon Nanotubes in Floating Catalyst Chemical Vapor Deposition

Saeed Ahmad,Qiang Zhang,Er-Xiong Ding,Hua Jiang,Esko I. Kauppinen

DOI: https://doi.org/10.1016/j.cplett.2022.140185

IF: 2.719

2022-11-14

Chemical Physics Letters

Abstract:Floating-catalyst CVD (FCCVD) is a highly promising technique for the scalable synthesis of single-walled carbon nanotubes (SWCNTs). The number concentration (NC) of catalyst particles is one of the process parameters which mainly influences yield of as-produced SWCNTs. In the conventional FCCVD methods, catalyst particles are usually synthesized by thermal decomposition of organometallic compounds inside the FCCVD reactor. Being in-situ catalyst formation in conventional FCCVD, it is an open question that how many SWCNTs a single catalyst particle can grow? Herein, we employed our novel spark discharged based FCCVD technique which decouples the formation of catalyst particles and SWCNTs synthesis into two subsequent process to investigate effects of catalyst NC on SWCNTs synthesis. The NC of both catalyst particles and SWCNTs in gas-phase were quantitatively compared using differential mobility analyzer (DMA). The DMA measurements corroborated with atomic force microscopy and X-rays photoelectron spectroscopy revealed that under carefully chosen reaction conditions in FCCVD, a single catalyst particle can grow more than one SWCNTs. We propose that after the growth of 1 st SWCNT, the catalyst particle detach itself to start nucleating 2 nd SWCNT and this process continues as long as the catalyst remains in the growth region of the FCCVD reactor.

chemistry, physical,physics, atomic, molecular & chemical
Guided Growth of In-Plane Silicon Nanowires

Linwei Yu,Maher Oudwan,Oumkelthoum Moustapha,Franck Fortuna,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1063/1.3227667

IF: 4

2009-01-01

Applied Physics Letters

Abstract:We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.
A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

Xiangdong Xu,Yinchuan Wang,Zhongfan Liu,Ruguang Zhao

DOI: https://doi.org/10.1002/adfm.200600658

IF: 19

2007-01-01

Advanced Functional Materials

Abstract:An approach for the large‐scale synthesis of high‐purity silicon nanowires (SiNWs) in ultrahigh vacuum is presented. A mixture of Si and SiO2 is evaporated by an electron beam, and the growth temperature is 700 °C, which is much lower than those used for other oxide‐assisted growths. A new type of single‐crystal SiNWs, with [221] orientation, is thus synthesized. Moreover, it is experimentally demonstrated that SiO intermediates are formed in the process, and the nanowires are obtained via a disproportionation reaction of 2SiO → Si + SiO2. A growth mechanism is proposed and the critical factors for the formation of 1D nanowires are also determined. The approach is particularly compatible with the mature Si‐based technology, and is favorable for device integration and practical applications.
A Simple Approach to Controllably Grow Network-Like Branched Single-Crystalline Si3n4 Nanostructures

Na Zhu,Zhijian Peng,Xiuli Fu,Chengbiao Wang,Zhiqiang Fu,Longhao Qi,Hezhuo Miao

DOI: https://doi.org/10.1016/j.solidstatesciences.2010.04.024

IF: 3.752

2010-01-01

Solid State Sciences

Abstract:We reported a simple, large-scale, and controllable growth method for network-like branched single-crystalline Si3N4 nanostructures by catalyst-assisted pyrolysis of a polysilazane. The templates were a silicon wafer deposited with a 5 nm Fe film. The processes simply involved in thermal cross-linking of the polymer precursor, crushing of the solidified preceramic polymer chunks into fine powder, and thermal pyrolysis of the powder under the protection of ultra-high purity nitrogen. The collected white network-like branched nanostnictures were formed through "metal-absorption on the surface of nanostructures" model by vapor-liquid-solid mechanism. Microstructure characterizations indicate that the nanostructures are single-crystalline hexagonal alpha-Si3N4. The reaction mechanism of Si3N4 nanonetworks was also proposed. (C) 2010 Elsevier Masson SAS. All rights reserved.
Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

Yinzi Cheng,Zongguang Liu,Ruijin Hu,Junzhuan Wang,Jun Xu,Linwei Yu

DOI: https://doi.org/10.1021/acsanm.4c02962

IF: 6.14

2024-01-01

ACS Applied Nano Materials

Abstract:The in-plane growth of high-quality crystalline silicon nanowires (SiNWs) guided by laser-heated metal catalysts provides a solid one-dimensional channel material for the integration of high-performance Si-based electronics, while the growth control of these SiNWs remains an unexplored problem. In this study, we demonstrate that the laser-heated growth of IPSLS SiNWs can be modulated by the diameter of leading catalysts. The large catalysts with a diameter of similar to 220 nm were directly heated under continuous laser illumination by a typical selected laser-droplet-heating mode, which resulted in the rapid growth of high-quality SiNWs with a large diameter of 166 +/- 27 nm. Conversely, the small catalysts (diameter of <130 nm) can only be activated by the underlying silicon substrate heated under laser illumination, allowing the rapid growth of thin SiNWs of 74 +/- 9 nm within 30 s. The different growth modes can be explained by a size-dependent heating theory of nanoscale catalysts with laser illumination. This study proposes a comprehensive understanding of the growth and diameter control of in-plane SiNWs under laser illumination, providing high-quality channel arrays for the construction of Si-based electronics.
Epitaxial growth of silicon nanowires using an aluminium catalyst

Yewu Wang,Volker Schmidt,Stephan Senz,Ulrich Gösele

DOI: https://doi.org/10.1038/nnano.2006.133

IF: 38.3

2006-01-01

Nature Nanotechnology

Abstract:Silicon nanowires have been identified as important components for future electronic and sensor nanodevices 1 . So far gold has dominated as the catalyst for growing Si nanowires via the vapour–liquid–solid (VLS) mechanism 2 , 3 , 4 , 5 . Unfortunately, gold traps electrons and holes in Si and poses a serious contamination problem for Si complementary metal oxide semiconductor (CMOS) processing. Although there are some reports on the use of non-gold catalysts 6 , 7 , 8 , 9 for Si nanowire growth, either the growth requires high temperatures and/or the catalysts are not compatible with CMOS requirements. From a technological standpoint, a much more attractive catalyst material would be aluminium, as it is a standard metal in Si process lines. Here we report for the first time the epitaxial growth of Al-catalysed Si nanowires and suggest that growth proceeds via a vapour–solid–solid (VSS) rather than a VLS mechanism. It is also found that the tapering of the nanowires can be strongly reduced by lowering the growth temperature.
Stability and Evolution of Low-Surface-Tension Metal Catalyzed Growth of Silicon Nanowires

Linwei Yu,Franck Fortuna,Benedict O'Donnell,Gilles Patriache,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1063/1.3569817

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Low-surface-tension metals were predicted to be insufficient to catalyze the growth of silicon nanowires (SiNWs) in vapor-liquid-solid (VLS) mode while counter examples do exist, for example, in the tin- or indium-catalyzed SiNWs. This puzzle remains largely unresolved. We first examine the local tension-force-balance in a tin-catalyzed SiNW by using a cross-section analysis. We found that the existence of an ultrathin sidewall-spreading catalyst layer helps to stabilize the catalyst drop during growth. The predicted contact-angle evolution, by an energetic balance model, is also supported by the experimental data. These results bring critical understanding on the low-surface-tension catalyzed VLS process.
Catalytic growth of α-FeSi2 and silicon nanowires

Z.Y. Zhang,X.L. Wu,L.W. Yang,G.S. Huang,G.G. Siu,Paul K. Chu

DOI: https://doi.org/10.1016/j.jcrysgro.2005.02.061

IF: 1.8

2005-01-01

Journal of Crystal Growth

Abstract:Via vaporization of Fe and Si powders mixed with a molar ratio of 1:1, α-FeSi2 nanowires were synthesized on one Si wafer, where the temperature is higher than 950°C and Fe supply is enough, and meantime Si nanowires were obtained on the other Si wafer, where the temperature is lower than 500°C and Fe atoms are much less than Si atoms in vapor. The two kinds of nanowires have diameters of 40–80nm and lengths of 3–10μm. Their shapes, crystallinity, and compositions are studied in terms of field emission scanning electron microscopy, X-ray diffraction spectra, and energy dispersive X-ray spectroscopy. From the obtained experimental results, we explain the growth mechanism of the two kinds of nanowires using the vapor–liquid–solid growth model. Two important conditions, high temperatures and enough Fe supply, are emphasized for syntheses of the α-FeSi2 nanowires.
H2-assisted control growth of Si nanowires

X.Q. Yan,D.F. Liu,L.J. Ci,J.X. Wang,Z.P. Zhou,H.J. Yuan,L. Song,Y. Gao,L.F. Liu,W.Y. Zhou,G. Wang,S.S. Xie

DOI: https://doi.org/10.1016/S0022-0248(03)01412-X

IF: 1.8

2003-01-01

Journal of Crystal Growth

Abstract:Large-scale desired silicon nanowires without amorphous silicon oxide sheath have been synthesized by thermal chemical vapor deposition using SiH4 gas at 650°C in a flow mixture of H2 and N2, compared with the short and thick Si nanowires with amorphous SiOx coating obtained in N2. Scanning electron microscopy (SEM), Energy dispersive X-ray spectrometry (EDX) analysis, and high-resolution transmission electron microscopy (HRTEM) have been employed to characterize the Si nanowires. The effects of H2 gas on the catalytic particle size and on the formation of Si nanowires are discussed in detail. Photoluminescence (PL) characteristics further demonstrate the large differences between the H2-assisted grown Si nanowires and the Si nanowires grown in N2.
Growth Mechanism And Dynamics Of In-Plane Solid-Liquid-Solid Silicon Nanowires

Linwei Yu,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1103/PhysRevB.81.085323

IF: 3.7

2010-01-01

Physical Review B

Abstract:In this paper, we investigate the growth mechanism and dynamic behavior of in-plane solid-liquid-solid (IPSLS) silicon nanowires (SiNWs), mediated by indium drops which transform hydrogenated amorphous silicon into crystalline SiNWs. Two distinctive growth modes of the SiNWs have been identified: (1) the grounded-growth (GG) mode in which the produced SiNWs are fixed to the substrate and (2) the suspended-growth (SG) mode where the SiNWs are carried by and move together with the catalyst drops. A comparative study of the SiNWs produced in SG and GG modes provides important insights into the IPSLS mechanism and reveals the unique growth balance condition in the moving SiNWs/catalyst drop system. For the GG-SiNWs, the interplay between the front absorption interface and the rear deposition interface of the catalyst drop leads to an interesting growth dynamics, which can be described by a kinetic equation model. For the SG-SiNWs, direct evidences of the rolling-forward behavior of the liquid catalyst drop have been witnessed.
Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

Zhaoguo Xue,Wanghua Chen,Xianhong Meng,Jun Xu,Yi Shi,Kunji Chen,Linwei Yu,Pere Roca Cabarrocas

DOI: https://doi.org/10.1016/j.apsusc.2022.153435

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Silicon nanowires (SiNWs) are advantageous building blocks to explore a wide range of high performance nanoelectmnics and photonics devices. In-plane solid-liquid-solid (IPSLS) SiNWs, grown by metal catalyst droplets that absorb hydrogenated amorphous silicon (a-Si:H) thin film to produce crystalline SiNWs, are particularly suitable for planar device fabrication and integration. Here, we explore a new growth control dimension to tailor the geometry of the in-plane SiNWs from island-chain to zigzag and to straight morphologies by using a simple plasma modification of the a-Si:H thin film precursor. This unique capability is due to fact that the Gibbs energy and bonding status of the a-Si:H layer can be largely modified by the plasma treatments at various substrate temperatures, which in turn have a huge impact on the growth balance condition of the SiNWs and consequently on their morphologies. These results highlight a facile and yet highly effective strategy to tailor the morphologyof in-plane SiNWs that will find important applications in fabricating nanoelectronic, sensor and logic devices.
In Situ Observation of Droplet Nanofluidics for Yielding Low-Dimensional Nanomaterials

Zheng Fan,Jean-Luc Maurice,Ileana Florea,Wanghua Chen,Linwei Yu,Stephane Guilet,Edmond Cambril,Xavier Lafosse,Laurent Couraud,Sophie Bouchoule,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1016/j.apsusc.2021.151510

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:Droplet based micro/nanofluidics has been demonstrated as a versatile tool in a wide range of fields. In particular, seeded growth of planar low-dimensional nanomaterials often relies on crawling metal droplets as catalytic media where nucleation and crystal growth proceed. However, direct observations of nanomaterials growth led by self-propelled droplet transport remain rare, which leaves many open questions on droplet behavior during growth. Here, we report in situ observations of in-plane Si nanowire growth in a transmission electron microscope, where an indium droplet migrates on a silicon nitride membrane coated by a layer of hydrogenated amorphous silicon (a-Si:H), dissolves the a-Si:H coating film on the membrane, and results in the production of a crystalline Si nanowire in its trail. This in situ observation, combined with the geometric investigation of the nanowires, presents nice consistency with de Gennes' theoretical prediction of reactive wetting induced droplet motion. Interestingly, we recorded a nanoflake-to-nanowire transition when the growth rate was increased by heating the membrane from 350 degrees C to 400 degrees C. This work directly unveils rich transport mechanism of catalytic droplets, which are expected to be a new platform for producing diverse low-dimensional nanomaterials and promote their potential applications in nanoscience and technologies.
Tough sheets of nanowires produced floating in the gas phase

Richard S. Schäufele,Miguel Vazquez-Pufleau,Juan J. Vilatela

DOI: https://doi.org/10.1039/D0MH00777C

2020-12-01

Abstract:Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale, continuous synthesis of silicon nanowires (SiNWs) suspended in the gas phase and their direct assembly into macroscopic sheets. Performing gas-phase growth of SiNWs through floating catalyst chemical vapor deposition using an aerosol of gold nanoparticles eliminates the need for substrates, increasing the growth rate by a factor of 500, reaching 1.4 $\mu$m s$^{-1}$ and leading to very long SiNWs. The combined high aspect ratio ($>$210) and large concentration of SiNWs in the gas-phase (1.5 x 107 cm$^{-3}$) enable the formation of macroscopic solids solely composed of percolated SiNWs, such as free-standing sheets and continuous metre-long SiNW tapes. Sheet samples of small diameter SiNWs ($<$25 nm) combine extraordinary flexibility in bending, tensile ductility around 3%, and over 50-fold higher toughness than Si-based anodes (fracture energy 0.18 $\pm$ 0.1 J g$^{-1}$). This synthesis and assembly process should be applicable to virtually any one-dimensional inorganic nanomaterial producible by thermochemical methods.

Materials Science

[Diagnosis and treatment of 56 carcinoma of gallbladder].

Ultrafast growth of single-crystalline Si nanowires

Ultrafast synthesis of SiC nanowire webs by floating catalysts rationalised through in-situ measurements and thermodynamic calculations

Atomistics of vapor-liquid-solid nanowire growth

Mass Transport Determined Silica Nanowires Growth on Spherical Photonic Crystals with Nanostructure-Enabled Functionalities

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Plasma-Enhanced Low Temperature Growth of Silicon Nanowires and Hierarchical Structures by Using Tin and Indium Catalysts

Multi-Nucleation of Single-Walled Carbon Nanotubes in Floating Catalyst Chemical Vapor Deposition

Guided Growth of In-Plane Silicon Nanowires

A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

A Simple Approach to Controllably Grow Network-Like Branched Single-Crystalline Si3n4 Nanostructures

Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

Epitaxial growth of silicon nanowires using an aluminium catalyst

Stability and Evolution of Low-Surface-Tension Metal Catalyzed Growth of Silicon Nanowires

Catalytic growth of α-FeSi2 and silicon nanowires

H2-assisted control growth of Si nanowires

Growth Mechanism And Dynamics Of In-Plane Solid-Liquid-Solid Silicon Nanowires

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

In Situ Observation of Droplet Nanofluidics for Yielding Low-Dimensional Nanomaterials

Tough sheets of nanowires produced floating in the gas phase