Abstract:Unidirectional growth of silicon nanowires (SiNWs) can be achieved via a vapor-liquid-solid (VLS) mechanism. Interestingly, when adopting low surface tension metals such as tin or indium to mediate the growth of SiNWs in a plasma-assisted VLS process, the standard scenario is challenged by the fact that low surface tension metals tend to coat the high energy sidewalls of SiNWs. Moreover, we show that tin-assisted SiNW growth can continue without any apparent metal droplet on top. To address these issues, we investigate the time evolution of tin-assisted SiNW growth. We suggest that, during the initial growth phase, an ultrathin metal layer wetting the SiNW sidewalls allows silicon adatoms to diffuse toward the top of the nanowires, and thus enhances the axial growth while suppressing the radial one (in a way similar to molecular beam epitaxy growth of SiNWs). Later on, the wetting layer can assist the growth even when the tin droplets are exhausted from the top of SiNWs. We propose that this phenomenon may hold for all low surface tension metal mediated VLS growth of SiNWs and could be helpful to tailor them for specific device applications.

Plasma-Enhanced Low Temperature Growth of Silicon Nanowires and Hierarchical Structures by Using Tin and Indium Catalysts

Ultrafast growth of single-crystalline Si nanowires

Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO(2) substrates.

Wetting Layer: the Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin

Initial Nucleation and Growth of In-Plane Solid-Liquid-solid Silicon Nanowires Catalyzed by Indium

Growth Study of Indium-Catalyzed Silicon Nanowires by Plasma Enhanced Chemical Vapor Deposition

In Situ Generation of Indium Catalysts to Grow Crystalline Silicon Nanowires at Low Temperature on Ito

Stability and Evolution of Low-Surface-Tension Metal Catalyzed Growth of Silicon Nanowires

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Silicon nano-wires grown at low temperature

Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Core-Shell Structure And Unique Faceting Of Sn-Catalyzed Silicon Nanowires

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Guided Growth of In-Plane Silicon Nanowires

Growth Mechanism And Dynamics Of In-Plane Solid-Liquid-Solid Silicon Nanowires

Guided Growth of In-Plane Lateral SiNWs Led by Indium Catalysts

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

Morphology control and growth dynamics of in-plane solid–liquid–solid silicon nanowires