Abstract:Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers.

In Situ Generation of Indium Catalysts to Grow Crystalline Silicon Nanowires at Low Temperature on Ito

Ultrafast growth of single-crystalline Si nanowires

Plasma-Enhanced Low Temperature Growth of Silicon Nanowires and Hierarchical Structures by Using Tin and Indium Catalysts

Initial Nucleation and Growth of In-Plane Solid-Liquid-solid Silicon Nanowires Catalyzed by Indium

Growth Study of Indium-Catalyzed Silicon Nanowires by Plasma Enhanced Chemical Vapor Deposition

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Enhanced Growth of Crystalline-Amorphous Core-Shell Silicon Nanowires by Catalytic Thermal CVD Using in Situ Generated Tin Catalyst

Silicon nano-wires grown at low temperature

Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO(2) substrates.

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.

Guided Growth of In-Plane Lateral SiNWs Led by Indium Catalysts

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Guided Growth of In-Plane Silicon Nanowires

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires