Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

Xibao Yang,Hang Lv,Shuanglong Chen,Qiushi Wang,Linhai Jiang
DOI: https://doi.org/10.1007/s12633-023-02538-9
IF: 3.4
2023-06-11
Silicon
Abstract:Ultrafine Si embedded SiO 2 nanowires have been prepared by thermal evaporation using Pt catalyst. The ultrafine Si embedded SiO 2 nanowires with a diameter of about 10 nm were grown in-situ on the Si substrate, conforming to a vapor-liquid-solid growth mechanism. On account of the existence of the quantum confinement effect, the absorption edge of the ultrafine Si embedded SiO 2 nanowires is slightly larger. The photoluminescence result reveals a blue shift in the ultrafine nanowires, which may also be due to the quantum confinement effect caused by the small size. The Pt-related light emission characteristics will enable the development of nanowires in the field of optoelectronics.
materials science, multidisciplinary,chemistry, physical
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