Epitaxial growth of silicon nanowires using an aluminium catalyst

Yewu Wang,Volker Schmidt,Stephan Senz,Ulrich Gösele
DOI: https://doi.org/10.1038/nnano.2006.133
IF: 38.3
2006-01-01
Nature Nanotechnology
Abstract:Silicon nanowires have been identified as important components for future electronic and sensor nanodevices 1 . So far gold has dominated as the catalyst for growing Si nanowires via the vapour–liquid–solid (VLS) mechanism 2 , 3 , 4 , 5 . Unfortunately, gold traps electrons and holes in Si and poses a serious contamination problem for Si complementary metal oxide semiconductor (CMOS) processing. Although there are some reports on the use of non-gold catalysts 6 , 7 , 8 , 9 for Si nanowire growth, either the growth requires high temperatures and/or the catalysts are not compatible with CMOS requirements. From a technological standpoint, a much more attractive catalyst material would be aluminium, as it is a standard metal in Si process lines. Here we report for the first time the epitaxial growth of Al-catalysed Si nanowires and suggest that growth proceeds via a vapour–solid–solid (VSS) rather than a VLS mechanism. It is also found that the tapering of the nanowires can be strongly reduced by lowering the growth temperature.
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