Abstract:Much recent attention has been focused on the development of field-effect transistors based on low-dimensional nanostructures for the detection and manipulation of molecules. Because of their extraordinarily high charge sensitivity, InAs nanowires present an excellent material system in which to probe and study the behavior of molecules on their surfaces and elucidate the underlying mechanisms dictating the sensor response. So far, chemical sensors have relied on slow, activated processes restricting their applicability to high temperatures and macroscopic adsorbate coverages. Here, we identify the transition into a highly sensitive regime of chemical sensing at ultralow concentrations (<1 ppm) via physisorption at room temperature using field-effect transistors with channels composed of several thousand InAs nanowires and ethanol as a simple analyte molecule. In this regime, the nanowire conductivity is dictated by a local gating effect from individual dipoles, leading to a nonlinear enhancement of the sensitivity. At higher concentrations (>1 ppm), the nanowire channel is globally gated by a uniform dipole layer at the nanowire surface. The former leads to a dramatic increase in sensitivity due to weakened screening and the one-dimensional geometry of the nanowire. In this regime, we detect concentrations of ethanol vapor as low as 10 ppb, 100 times below the lowest concentrations previously reported. Furthermore, we demonstrate electrostatic control of the sensitivity and dynamic range of the InAs nanowire-based sensor and construct a unified model that accurately describes and predicts the sensor response over the tested concentration range (10 ppb to 10 ppm).

High-resolution Detection of Au Catalyst Atoms in Si Nanowires

Ultrafast growth of single-crystalline Si nanowires

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

Epitaxial growth of silicon nanowires using an aluminium catalyst

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Point defect configurations of supersaturated Au atoms inside Si nanowires.

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Atomistics of Vapour–liquid–solid Nanowire Growth

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Deterministic Single-Row-Droplet Catalyst Formation for Uniform Growth Integration of High-Density Silicon Nanowires

P1&#x2013;17: Controlled Synthesis of Au and Ag/Au Nanoparticles for Fabrication of N-Doped Amorphous Si Nanowire Field Emission Cathode

Nonlinear Chemical Sensitivity Enhancement of Nanowires in the Ultralow Concentration Regime

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

High-Performance Field-Effect Sensing of Ammonia Based on High-Density and Ultrathin Silicon Nanowire Channels

Catalyst preparation for CMOS-compatible silicon nanowire synthesis

Atomically Smooth P-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature

Tailoring Optical Properties of Silicon Nanowires by Au Nanostructure Decorations: Enhanced Raman Scattering and Photodetection

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Quantitative Study of GaAs Nanowires Catalyzed by Au Film of Different Thicknesses