Abstract:Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers.

Unusual Catalyst-Free Epitaxial Growth Of Silicon Nanowires By Thermal Evaporation

Ultrafast growth of single-crystalline Si nanowires

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

One-dimensional Silicon Nanostructures Fabricated by Thermal Evaporation

Silicon nano-wires grown at low temperature

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst

Synthesis of Sic Nanowires by Thermal Evaporation Method Without Catalyst Assistant

Orientation‐Controlled Growth of Single‐Crystal Silicon‐Nanowire Arrays

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Metal-catalyst-free epitaxial growth of aligned ZnO nanowires on silicon wafers at low temperature

A simple route to synthesize scales of aligned single-crystalline SiC nanowires arrays with very small diameter and optical properties.

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Self‐Assembled In‐Plane Growth of Mg2SiO4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Growth of ZnO Nanowires by Free-Catalytic Thermal Evaporation of ZnS Powder