Metal-catalyst-free epitaxial growth of aligned ZnO nanowires on silicon wafers at low temperature

Ye Zhang,Hongbo Jia,Dapeng Yu
DOI: https://doi.org/10.1088/0022-3727/37/3/018
2004-01-01
Abstract:Hexagonally well-faceted ZnO nanowire arrays were successfully aligned to Si wafers using a metal-catalyst-free physical vapour deposition method at 500degreesC. The ZnO nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The one-dimensional growth of these nanowires with an average diameter of 100 nm follows the c axis direction of wurtzite ZnO. The as-synthesized nanowire arrays on Si wafers could offer novel opportunities for both fundamental research and technological applications.
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