Abstract:Nanocrystals, nanocrystalline films, and nanowires of group IV semiconductors have been, and still are, a matter of relevant fundamental and technological research interest, which is devoted to materials that in their bulk phases are at the origin of the development of semiconductor physics and of modern microelectronics. The aim of this chapter is to give a comprehensive view of the role of the process chemistries and temperatures in the morphological, structural, and physical properties of these semiconductors at the nano-size, with relevant attention on the effect of metals used as catalysts and of the gaseous precursors. Major concern will be given to nanocrystalline silicon films and nanowires, in view of their quantum confinement potentialities, which could offer to silicon optoelectronic applications forbidden in its bulk phase. It will be shown that chemical surface contaminations or the presence of amorphous phases at the surface play a critical role in the properties of these nanomaterials, and that the set-up of phase transitions induced by surface strain does also occur in the case of silicon nanowires. It will be, in fact, shown that size-induced strain is involved in the stabilization of the hexagonal structure of silicon nanowires when their diameter is below a critical value. This chapter provides a comprehensive view of the role of the process chemistries and temperatures in the morphological, structural, and physical properties of these semiconductors at the nano-size, with relevant attention on the effect of metals used as catalysts and of the gaseous precursors. Colloidal silicon nanocrystals and silicon quantum dots belong to a vast family of colloidal nanocrystals suitably dispersed in a liquid supporting medium. During the thermal annealing, the nanocrystal size increases with time, associated with the decrease of the amorphous silicon mass, and a-Si begins to behave as a capping layer of Si-nanocrystals. Significant topological differences are presented by metal-assisted and Metal-assisted chemical etching-grown Si nanowires (NWs). Raman spectroscopy is used as a direct probe of phonon confinement in Si NWs, just in the same way as in the cases of dots and of nanocrystalline silicon.

LASER PROCESSING OF SEMICONDUCTOR NANOMATERIALS

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

Preparation, Structural, and Physical Properties of Nanocrystalline Silicon, Germanium, and Diamond Nanocrystals, Films, and Nanowires *

Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Auger Processes in Nanosize Semiconductor Crystals

Controlled synthesis of semiconductor nanostructures in the liquid phase.

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Femtosecond Laser Processing of Lithium Niobate Crystal: Principle and Applications

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

A review of laser beam applications for processing silicon

Laser-based Micro/nanofabrication in One, Two and Three Dimensions

A LASER ABLATION METHOD FOR THE SYNTHESIS OF SEMICONDUCTOR NANOWIRES

Laser-Processed Nanosilicon: A Multifunctional Nanomaterial for Energy and Healthcare

Liquid-assisted laser nanotexturing of silicon: onset of hydrodynamic processes regulated by laser-induced periodic surface structures

Laser Ablation of Silicon Wafers: New Findings, New Insights (conference Presentation)

Laser Synthesis and Microfabrication of Micro/Nanostructured Materials Toward Energy Conversion and Storage

Laser nano-fabrication inside silicon with spatial beam modulation and non-local seeding

Liquid‐Assisted Laser Nanotexturing of Silicon: Onset of Hydrodynamic Processes Regulated by Laser‐Induced Periodic Surface Structures