Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Laser-Assisted on Demand Growth of Semiconducting Nanowires

Ultrafast growth of single-crystalline Si nanowires

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Superfast Growth Dynamics of High-Quality Silicon Nanowires on Polymer Films Via Self-Selected Laser-Droplet-Heating.

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

Single-crystal germanium layers grown on silicon by nanowire seeding

A LASER ABLATION METHOD FOR THE SYNTHESIS OF SEMICONDUCTOR NANOWIRES

3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.

Control of Ge island coalescence for the formation of nanowires on silicon.

Silicon Nanowires Prepared by Laser Ablation at High Temperature

Guided Growth of In-Plane Silicon Nanowires

Planar Growth, Integration, and Applications of Semiconducting Nanowires