Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Multi-Parametric Growth of Silicon Nanowires in A Single Platform by Laser-Induced Localized Heat Sources

Ultrafast growth of single-crystalline Si nanowires

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating

Superfast Growth Dynamics of High-Quality Silicon Nanowires on Polymer Films Via Self-Selected Laser-Droplet-Heating.

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Guided Growth of In-Plane Silicon Nanowires

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Silicon Nanowires Prepared by Laser Ablation at High Temperature

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Laser nano-fabrication inside silicon with spatial beam modulation and non-local seeding

Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Engineering Island-Chain Silicon Nanowires Via a Droplet Mediated Plateau-Rayleigh Transformation

Laser nanofabrication inside silicon with spatial beam modulation and anisotropic seeding

Growth-In-Place Deployment of In-Plane Silicon Nanowires

Transmission electron microscopy characterizations of local amorphization of single crystal silicon by nanosecond pulsed laser direct writing