Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Transient Heating and Melting Transformations in Argon-Ion Laser Irradiation of Polysilicon Films

Transient Temperature During Pulsed Excimer-Laser Heating of Thin Polysilicon Films Obtained by Optical Reflectivity Measurement

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Transient reflectivity measurements and heat transfer modeling in laser annealing of semiconductor films

Transient Optical Transmission Measurement in Excimer-Laser Irradiation of Amorphous Silicon Films

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

High temperature radiative properties of thin polysilicon films at the λ = 0.6328 μm wavelength

In Situ and Ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing

Melting and Resolidification Dynamics of A-Si and Poly-Si Thin Films During Excimer Laser Annealing

Temporal Profile of Optical-Transmission Probe for Pulsed-Laser Heating of Amorphous-Silicon Films

Thermal Transport in Melting and Recrystallization of Amorphous and Polycrystalline Si Thin Films

Heat-Transfer in Excimer-Laser Melting of Thin Polysilicon Layers

Modeling of pulsed laser irradiation of thin silicon layers

INTERPRETATION OF OPTICAL DIAGNOSTICS FOR THE ANALYSIS OF LASER CRYSTALLIZATION OF AMORPHOUS SILICON FILMS

Pulsed excimer laser melting of thin silicon films

Transient Temperature Measurement of Amorphous Silicon Thin Films During Excimer Laser Annealing

Investigation of the Transient Phase Change of Silicon Irradiated by CW Fiber Laser

Measurement Of Solid-Liquid Interface Temperature During Pulsed Excimer-Laser Melting Of Polycrystalline Silicon Films

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

A Heat Transfer Algorithm for the Laser-Induced Melting and Recrystallization of Thin Silicon Layers