Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

Pulsed excimer laser melting of thin silicon films

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Modeling of pulsed laser irradiation of thin silicon layers

Pulsed Laser Annealing of Semiconductor Structures for Functional Devices

Atomistic-continuum modeling of short laser pulse melting of Si targets

Experimental and Computational Analysis of Laser Melting of Thin Silicon Films

Heat-Transfer in Excimer-Laser Melting of Thin Polysilicon Layers

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Ultra-fast laser-induced recrystallization of amorphous silicon films

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Measurement Of Solid-Liquid Interface Temperature During Pulsed Excimer-Laser Melting Of Polycrystalline Silicon Films

Thermal Shock of Silicon-Based Materials under Multi-Pulsed Intense Laser Radiation

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

The Influence of Thermal Effects and Dielectric Films on the Electronic Quality of P(+)-Doped Silicon Processed by Nanosecond Laser

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

In-situ Observation of Laser-induced Melting and Resolidification Dynamics of Si Thin Films

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Transient Heating and Melting Transformations in Argon-Ion Laser Irradiation of Polysilicon Films

Multipulse Nanosecond Laser Irradiation of Silicon for the Investigation of Surface Morphology and Photoelectric Properties

Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon

Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures