Abstract:The acquisition of reliable knowledge about the mechanism of short laser pulse interactions with semiconductor materials is an important step for high-tech technologies towards the development of new electronic devices, the functionalization of material surfaces with predesigned optical properties, and the manufacturing of nanorobots (such as nanoparticles) for bio-medical applications. The laser-induced nanostructuring of semiconductors, however, is a complex phenomenon with several interplaying processes occurring on a wide spatial and temporal scale. In this work, we apply the atomistic-continuum approach for modeling the interaction of an fs-laser pulse with a semiconductor target, using monolithic crystalline silicon (c-Si) and porous silicon (Si). This model addresses the kinetics of non-equilibrium laser-induced phase transitions with atomic resolution via molecular dynamics, whereas the effect of the laser-generated free carriers (electron-hole pairs) is accounted for via the dynamics of their density and temperature. The combined model was applied to study the microscopic mechanism of phase transitions during the laser-induced melting and ablation of monolithic crystalline (c-Si) and porous Si targets in a vacuum. The melting thresholds for the monolithic and porous targets were found to be 0.32 J/cm2 and 0.29 J/cm2, respectively. The limited heat conduction mechanism and the absence of internal stress accumulation were found to be involved in the processes responsible for the lowering of the melting threshold in the porous target. The results of this modeling were validated by comparing the melting thresholds obtained in the simulations to the experimental values. A difference in the mechanisms of ablation of the c-Si and porous Si targets was considered. Based on the simulation results, a prediction regarding the mechanism of the laser-assisted production of Si nanoparticles with the desired properties is drawn.

Modeling of pulsed laser irradiation of thin silicon layers

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Pulsed excimer laser melting of thin silicon films

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Modeling of Short-Pulse Laser Interactions with Monolithic and Porous Silicon Targets with an Atomistic-Continuum Approach

Time-resolved Temperature Measurement and Numerical Simulation of Millisecond Laser Irradiated Silicon

Time-resolved Temperature Measurement and Numerical Simulation of Superposed Pulsed Nd:YAG Laser Irradiated Silicon

Thermal Shock of Silicon-Based Materials under Multi-Pulsed Intense Laser Radiation

Transient reflectivity measurements and heat transfer modeling in laser annealing of semiconductor films

Transient Heating and Melting Transformations in Argon-Ion Laser Irradiation of Polysilicon Films

Investigation of the Transient Phase Change of Silicon Irradiated by CW Fiber Laser

Plasma and Ablation Dynamics in Ultrafast Laser Processing of Crystalline Silicon

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Three-temperature modeling of laser-induced damage process in silicon

Temporal Profile of Optical-Transmission Probe for Pulsed-Laser Heating of Amorphous-Silicon Films

Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser.

Laser-Induced Damage Threshold of Silicon in Millisecond, Nanosecond, and Picosecond Regimes

Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon

Numerical Simulation of Vaporization Effect of Long Pulsed Laser Interaction with Silicon