Study of Thermal Distribution of Silicon Materials Irradiated by High Power Laser

YU Ye,NIU Yanxiong,LIU Jiei
DOI: https://doi.org/10.3969/j.issn.1671-1815.2006.19.043
2006-01-01
Abstract:Detectors are easy to be disturbed or damaged by laser during optoelectronic countermeasures. Irradiation effect of semiconductor induced by high power CW laser is investigated. With integral-transform method, two-dimension transient thermal distribution model of silicon materials irradiated by flat-topping CW laser is established. The research result indicates that when silicon materials is irradiated by circular flat-topping laser, the temperature of lasing area decreases from the facular center to the brim, and hygral change at the lasing area brim is sharp. The integral situation of temperature distribution of silicon materials’ front surface is approximately identical under the condition of different irradiation times. With given laser power density and irradiation time, the temperature rise of silicon materials’ front surface is inverse correlation with silicon materials’ radius.
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