Calculation of the temperature distribution inside semiconductor films irradiated by a pulsed laser

Xiang Gao,XinFan Huang,Kunji Chen
1997-01-01
Abstract:Temperature distributions induced by laser pulses in an absorptive semiconductor film deposited on a non-absorptive substrate have been calculated. For cases of ��-Si:H film and ��-Si:H/a-SiNx:H multi-quantum well structure on the quartz substrates irradiated by the KrF pulsed excimer laser, the effect of film thickness, laser energy density and the ratio of sublayers' thicknesses of a-Si:H/a-SiNx:H MQW structure on the temperature distribution and crystallization of a-Si:H and a-Si:H/a-SiNx:H MQW structure.
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