Abstract:In order to study interaction process and damage mechanism between laser and CCD sensors,an interline transfer surface array CCD irradiated by 1.06μm CW laser was analyzed and simulated by means of finite element analysis.Thermal coupling model was established by using laser irradiation area of substrate Si surface as heat source.The temperature distribution and thermal stress distribution of CCD were simulated.By comparing and analyzing temperature damage and stress damage of the components,it was found that stress damage was prior to temperature damage.The results show that as the convergence of the fixed boundary and the free boundary,the thermal stress at the edge of the lower surface of the base Si is the first to exceed the damage threshold of 120MPa at the time of laser action of 0.1s,and stress failure occurs.Si material slips from the lower surface edge to the center,and the substrate is gradually out of fix.At the time of laser action of 0.3s,stress failure occurs to Al film and SiO2 film and Al film strips radically from the inside to the outside due to thermal stress over the adhesion strength of 100MPa,finally the CCD is out of work position and fails.The research achievements provide theoretical basis for laser damage and protection of CCD sensors.

Research of temperature field and thermal stress field of CCD under laser irradiation