Abstract:Surface-textured structure is currently an interesting topic since it can efficiently reduce the optical losses in advanced optoelectronic devices via light management. In this work, we built a model in finite-difference time-domain (FDTD) solutions by setting the simulation parameters based on the morphology of the Si nanostructures and compared with the experimental results in order to study the anti-reflection behaviors of the present nano-patterned structures. It is found that the reflectance is gradually reduced by increasing the depth of Si nanostructures which is in well agreement with the experimental observations. The reflectance can be lower than 10 % in the light range from 400 to 850 nm for Si nano-patterned structures with a depth of 150 nm despite the quite low aspect ratio, which can be understood as the formation of gradually changed index layer and the scattering effect of Si nano-patterned structures. By depositing the Si quantum dots/SiO2 multilayers on nano-patterned Si substrate, the reflectance can be further suppressed and the luminescence intensity centered at 820 nm from Si quantum dots is enhanced by 6.6-fold compared with that of flat one, which can be attributed to the improved light extraction efficiency. However, the further etch time causes the reduction of luminescence intensity from Si quantum dots which may ascribe to the serious surface recombination of carriers.

Light Field on Silicon Substrate of Charge Coupled Device

Research on the optical field distribution and micro-fabrication model in convex-surface laser lithography

A Study of the Impact on Telecentricity to the Illumination System Based on Ccd Imaging

Development of Visible-Light Optical Simulator Based on Liquid Crystal on Silicon Technology

Simulation Of Imaging And Refocusing For Light Field Photography

Research of temperature field and thermal stress field of CCD under laser irradiation

10‐2: A Deep Depth of Field Near Eye Light Field Displays Utilizing LC Lens and Dual‐layer LCDs

Numerical Simulation of Light Intensity Distribution in Vicinity of Defect on Fused Silica Subsurface

Three-Dimensional Numerical Simulation of Light Field Modulation in the Vicinity of Inclusions in Silica Subsurface

Optical Far-Field Detection of Sub-λ/14 Wide Defects by Conjugate Structured Light-Field Microscopy (C-Sim)

Manipulations of Light by Ordered Micro-Holes in Silicon Substrates.

Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application

Numerical Simulation of Light Intensity Distribution in the Vicinity of Three-Dimensional Hertzian Conical Scratch on Fused Silica Subsurface

Simulation of Light-Field Camera Imaging Based on Ray Splitting Monte Carlo Method

Combined Modulation to Incident Laser by Subsurface Crack and Contaminant on Fused Silica

Light Field Intensification in Optical Films Induced by Intercoupling of Defects and Organic Contamination

Imaging Optical Fields below Metal Films and Metal-Dielectric Waveguides by a Scanning Microscope.

3D surface morphology imaging of opaque microstructures via light-field microscopy

Lensless coherent diffraction imaging based on spatial light modulator with unknown modulation curve

Simulation and Experimental Study on Anti-reflection Characteristics of Nano-patterned Si Structures for Si Quantum Dot-Based Light-Emitting Devices

Effect of Fused Silica Subsurface Defect Site Density on Light Intensification